Provided is a layered-double-hydroxide-containing composite material including a porous substrate and a functional layer disposed on and/or in the porous substrate, the functional layer containing a layered double hydroxide represented by the formula M.sup.2+.sub.1xM.sup.3+.sub.x(OH).sub.2A.sup.n.sub.x/n.mH.sub.2O, where M.sup.2+ represents a divalent cation, M.sup.3+ represents a trivalent cation, A.sup.n represents an n-valent anion, n is an integer of 1 or more, and x is 0.1 to 0.4, and the functional layer further containing sulfur (S) at the interface between the functional layer and the porous substrate and in the vicinity of the interface. In the LDH-containing composite material of the present invention, the LDH-containing functional layer disposed on and/or in the porous substrate exhibits significantly improved conductivity.

The invention concerns a refractory ceramic batch as well as a refractory ceramic product.

[Object] To provide a gas nozzle which meets a requirement to suppress the fall of particles. [Solution] A gas nozzle 4 according to an aspect of the present invention includes a columnar main body 13 formed of a ceramic sintered body provided with a through-hole 12 formed therein through which a gas flows, an exhaust port 15 of the through-hole 12 for the gas is formed in one end surface S1 of the main body 13, and the mean width of the profile elements (Rsm) of the one end surface S1 is 5 times or more the average crystalline grain diameter of the ceramic sintered body.

[Object] To provide a gas nozzle which meets a requirement to suppress the fall of particles. [Solution] A gas nozzle 4 according to an aspect of the present invention includes a columnar main body 13 formed of a ceramic sintered body provided with a through-hole 12 formed therein through which a gas flows, an exhaust port 15 of the through-hole 12 for the gas is formed in one end surface S1 of the main body 13, and the mean width of the profile elements (Rsm) of the one end surface S1 is 5 times or more the average crystalline grain diameter of the ceramic sintered body.

A dielectric composition containing a complex oxide represented by the formula of A.sub.B.sub.C.sub.2O.sub.++5 as the main component, wherein A represents Ba, B represents at least one element selected from the group consisting of Ca and Sr, C represents at least one element selected from the group consisting of Ta and Nb, and , and meet the following conditions, i.e., ++=1.000, 0.000<0.375, 0.625<1.000, 0.0000.375.

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550 C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.010.sup.18cm.sup.3, and a carrier mobility of 10 cm.sup.2V.sup.1sec.sup.1 or higher.

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550 C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.010.sup.18cm.sup.3, and a carrier mobility of 10 cm.sup.2V.sup.1sec.sup.1 or higher.

A particulate composition for use in alumina-magnesia spinel forming dry vibratable mixtures may include, based on the total weight of the particulate composition, from 95 to 99.9 wt % of a mixture of particulate Al.sub.2O.sub.3 and particulate MgO, and from 0.1 to 5 wt % binding agent, wherein at least a portion of the particles of said mixture of particulate Al.sub.2O.sub.3 and particulate MgO is present in the particulate composition as a coating of particles on the surface of other particles. Methods of producing and using the particulate composition are also described.

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550 C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 1.010.sup.18 cm.sup.3, and a carrier mobility of 10 cm.sup.2 V.sup.1 sec.sup.1 or higher.

A persistent virtual area that supports establishment of respective presences of communicants operating respective network nodes connected to the virtual area even after all network nodes have disconnected from the virtual area is maintained. A presence in the virtual area is established for a user of a Public Switched Telephone Network (PSTN) terminal device. Transmission of data associated with the virtual area to the PSTN terminal device.