According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

A mould for manufacturing a packing member from a liquid ceramic composition. The mould including a first part and a second part, wherein the first part and/or the second part comprise an open mould cavity and wherein the first and second parts are operable to engage to form a closed mould cavity, wherein the mould further includes a reservoir forming member, and wherein the mould is operable to be moved from an open position in which the first and second parts are at least partially spaced such that the reservoir member forms a reservoir cavity and the mould cavity is open, to a partially closed position in which the location of the reservoir cavity has moved with respect to the mould cavity and/or the volume of the reservoir cavity has reduced, and then to a closed position in which the first and second parts are engaged such that the mould cavity is closed.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.

A shaped ceramic abrasive particle, in particular on the basis of alpha-Al.sub.2O.sub.3, includes at least three faces, at least two faces of which form a common vertex on which at least one corner common to the three faces lies. The abrasive particle has at least one structural weakening element. The disclosure also relates to an abrasive article including the abrasive particles, and a method for producing the abrasive particles.

A shaped ceramic abrasive particle, in particular on the basis of alpha-Al.sub.2O.sub.3, includes at least three faces, at least two faces of which form a common vertex on which at least one corner common to the three faces lies. The abrasive particle has at least one structural weakening element. The disclosure also relates to an abrasive article including the abrasive particles, and a method for producing the abrasive particles.

A gas turbine engine article includes a substrate and a silicate-resistant barrier coating disposed on the substrate. The silicate-resistant barrier coating is composed of a refractory matrix and a calcium aluminosilicate additive (CAS additive) dispersed in the refractory matrix.

A gas turbine engine article includes a substrate and a silicate-resistant barrier coating disposed on the substrate. The silicate-resistant barrier coating is composed of a refractory matrix and a calcium aluminosilicate additive (CAS additive) dispersed in the refractory matrix.

A method may include fused filament fabricating a fused filament fabricated component by delivering a softened filament to selected locations at or adjacent to a build surface. The softened filament may include a binder and a primary material. The binder is configured to release a secondary material upon heating at or above a conversion temperature. The method also may include heating the fused filament fabricated component to a temperature at or above the conversion temperature to sinter the primary material to form a sintered part and cause the binder to release the secondary material within the sintered part.