An oxide superconductor of an embodiment includes an oxide superconducting layer including at least one superconducting region containing barium (Ba), copper (Cu), and a first rare earth element, having a continuous perovskite structure, and having a size of 100 nm100 nm100 nm or more, and a non-superconducting region in contact with the at least one superconducting region, containing praseodymium (Pr), barium (Ba), copper (Cu), and a second rare earth element, having a ratio of a number of atoms of the praseodymium (Pr) to a sum of a number of atoms of the second rare earth element and the number of atoms of the praseodymium (Pr) being 20% or more, having a continuous perovskite structure continuous with the continuous perovskite structure of the superconducting region, and having a size of 100 nm100 nm100 nm or more.

Disclosed herein are polymer derived ceramics and methods of making the same. The ceramics may be obtained by first thermolyzing a composition including a pre-ceramic polymer and metal salt, and further subjecting the thermolysis step to a pyrolysis step.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

A powder contains a metal oxide and satisfies the following conditions: the powder has peaks of a particle size in a range of from 0.1 to less than 5 m and in a range of from 5 to less than 50 m in a frequency distribution curve based on a volume-based particle size distribution obtained by a laser diffraction method. The second condition is that a difference between a tap density and an initial bulk density satisfies the following relationship 0.88 g/cm.sup.3(tap densityinitial bulk density)0.94 g/cm.sup.3.

A powder contains a metal oxide and satisfies the following conditions: the powder has peaks of a particle size in a range of from 0.1 to less than 5 m and in a range of from 5 to less than 50 m in a frequency distribution curve based on a volume-based particle size distribution obtained by a laser diffraction method. The second condition is that a difference between a tap density and an initial bulk density satisfies the following relationship 0.88 g/cm.sup.3(tap densityinitial bulk density)0.94 g/cm.sup.3.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm V.sup.1sec.sup.1 or higher.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be at least 0.08 and less than 0.20 when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 1.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm V.sup.1sec.sup.1 or higher.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm.sup.2 V.sup.1 sec.sup.1 or higher.

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550 C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.010.sup.18 cm.sup.3 or lower, and a carrier mobility of 10 cm.sup.2 V.sup.1 sec.sup.1 or higher.