An image acquisition semiconductor film for a high-resolution mass spectrometric imaging system, and a preparation method and an application. The image acquisition semiconductor film for the high-resolution mass spectrometric imaging system is prepared by using the following method: weighing semiconductor nanometer particles, putting the semiconductor nanometer particles into a muffle furnace for burning first, further grinding by using an agate mortar, and uniformly dispersing the semiconductor nanometer particles so as to obtain semiconductor nanometer powder; and finally, pressing the semiconductor nanometer powder in a compressor so as to obtain the semiconductor film. Based on laser activated electron tunnelling as well as photoelectron capture ionization and dissociation, sample molecules are ionized without background interference; the limitation of a conventional MALDI substrate is overcome; the semiconductor film is simple and easy to obtain, is stable in mass spectrometric signal, has a uniform and smooth surface, generates no background interference, and can be used for fingerprint analyzing and animal and plant tissue slice analysis; and the semiconductor film is particularly suitable for accurate mass spectrometric imaging of small molecular substances, so that quality control and industrialization can be performed conveniently.

Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.

Provided according to embodiments of the invention are varistor ceramic formulations that include zinc oxide (ZnO). In particular, varistor ceramic formulations of the invention may include dopants including an alkali metal compound, an alkaline earth compound, an oxide of boron, an oxide of aluminum, or a combination thereof. Varistor ceramic formulations may also include other metal oxides. Also provided according to embodiments of the invention are varistor ceramic materials formed by sintering a varistor ceramic formulation according to an embodiment of the invention. Further provided are varistors formed from such ceramic materials and methods of making such materials.

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3≧Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is α and α×Tc3+(1−α)×Tc2 is Tc4, |Tc4−Tc2|≦50° C.

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3≧Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is α and α×Tc3+(1−α)×Tc2 is Tc4, |Tc4−Tc2|≦50° C.

Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm.sup.3 or greater, the number of the spinel phases per area of 20 counts/100 μm.sup.2 or greater, and a spinel phase distribution index of 0.40 or less.

Provided is a zinc oxide-based sputtering target that enables production of a zinc oxide-based sputtered film having higher transparency and electrical conductivity. The zinc oxide-based sputtering target of the present invention is composed of a zinc oxide-based sintered body including zinc oxide crystal grains as a main phase and spinel phases as a dopant-containing grain boundary phase, and the zinc oxide-based sputtering target has a degree of (002) orientation of ZnO of 80% or greater at a sputtering surface, a density of the zinc oxide-based sintered body of 5.50 g/cm.sup.3 or greater, the number of the spinel phases per area of 20 counts/100 μm.sup.2 or greater, and a spinel phase distribution index of 0.40 or less.

A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as “resistor”) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

To provide a zinc oxide-based varistor that exhibits adequate characteristics without using antimony. Disclosed is a sintered body for a varistor, including zinc oxide as a main component; 0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi); 0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co); 0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and 0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), wherein the contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities.