Provided are metal oxide varistors comprising a sintered ceramic, in which the ceramic comprises, by weight, about 91.0% to about 97.0% ZnO, at least 0.3% Mn, at least 0.4% Bi, at least 1.0% Sb, and 0.50% or less Co. The metal oxide varistors as disclosed herein may exhibit reduced power dissipation, improved thermal stability, and may be produced at a lower cost relative to conventional MOV devices.

Disclosed herein are embodiments of low temperature co-fireable scheelite materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. In some embodiments, the scheelite material can include aluminum oxide for temperature expansion regulation.

A method for manufacturing a multilayer varistor includes: a first step including providing a multilayer stack in which a plurality of green sheet layers, each containing a Zn oxide powder as a main component and a Pr oxide powder as a sub-component, and a plurality of internal electrode paste layers, each containing a Pd powder, are alternately stacked; and a second step including forming a sintered compact, including an internal electrode inside, by baking the multilayer stack. The second step includes: a first sub-step including baking the multilayer stack by setting an oxygen concentration in an atmosphere at 1000 ppm by volume or less while increasing a temperature from 500° C. to 800° C.; and a second sub-step including baking, after the first sub-step, the multilayer stack by setting the oxygen concentration in the atmosphere at 1000 ppm by volume or more while increasing the temperature to a maximum allowable temperature.

A method for manufacturing a multilayer varistor includes: a first step including providing a multilayer stack in which a plurality of green sheet layers, each containing a Zn oxide powder as a main component and a Pr oxide powder as a sub-component, and a plurality of internal electrode paste layers, each containing a Pd powder, are alternately stacked; and a second step including forming a sintered compact, including an internal electrode inside, by baking the multilayer stack. The second step includes: a first sub-step including baking the multilayer stack by setting an oxygen concentration in an atmosphere at 1000 ppm by volume or less while increasing a temperature from 500° C. to 800° C.; and a second sub-step including baking, after the first sub-step, the multilayer stack by setting the oxygen concentration in the atmosphere at 1000 ppm by volume or more while increasing the temperature to a maximum allowable temperature.

Porous, binderless ceramic surface modification materials are described, and applications of use thereof. The ceramic material may include a metal oxide and/or metal hydroxide, and/or hydrates thereof, on a substrate surface.

Porous, binderless ceramic surface modification materials are described, and applications of use thereof. The ceramic material may include a metal oxide and/or metal hydroxide, and/or hydrates thereof, on a substrate surface.

Nanoporous selective sol-gel ceramic membranes, selective-membrane structures, and related methods are described. Representative ceramic selective membranes include ion-conductive membranes (e.g., proton-conducting membranes) and gas selective membranes. Representative uses for the membranes include incorporation into fuel cells and redox flow batteries (RFB) as ion-conducting membranes.

Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 μm or less or a maximum height Ry of 10 μm or less.

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.