The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.

Compounds are generally provided, which may be particularly used to form a layer in a coating system. In one embodiment, the compound may have the formula: A.sub.xB.sub.bLn.sub.1-x-bHf.sub.1-t-dTi.sub.tD.sub.dMO.sub.6, where: A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; x is about 0.01 to about 0.99; b is 0 to about 0.5, with 1-x-b being 0 to about 0.99 such that Ln is present in the compound; Ln is a rare earth or a mixture thereof that is different than A; t is 0 to about 0.99; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to about 0.5; the sum of t and d is less than 1 such that Hf is present in the compound; and M is Ta, Nb, or a mixture thereof.

Compounds are generally provided, which may be particularly used to form a layer in a coating system. In one embodiment, the compound may have the formula: A.sub.xB.sub.bLn.sub.1-x-bHf.sub.1-t-dTi.sub.tD.sub.dMO.sub.6, where: A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; x is about 0.01 to about 0.99; b is 0 to about 0.5, with 1-x-b being 0 to about 0.99 such that Ln is present in the compound; Ln is a rare earth or a mixture thereof that is different than A; t is 0 to about 0.99; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to about 0.5; the sum of t and d is less than 1 such that Hf is present in the compound; and M is Ta, Nb, or a mixture thereof.

An article including a substrate and a plurality of coatings disposed on the substrate is presented. The plurality of coatings includes a thermal barrier coating disposed on the substrate; and a protective coating including a calcium-magnesium-aluminum-silicon-oxide (CMAS)-reactive material disposed on the thermal barrier coating. The CMAS-reactive material has an orthorhombic weberite crystal structure. The CMAS-reactive material is present in the plurality of coatings in an effective amount to react with a CMAS composition at an operating temperature of the thermal barrier coating, thereby forming a reaction product having one or both of melting temperature and viscosity greater than that of the CMAS composition. A method of making the article and a related turbine engine component are also presented.

A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC.sub.2O.sub.5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC.sub.2O.sub.5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

The present invention provides a piezoelectric material not containing lead and potassium, having a high relative density, a high Curie temperature, and a high mechanical quality factor, and exhibiting good piezoelectricity. The piezoelectric material contains 0.04 percent by mole or more and 2.00 percent by mole or less of Cu relative to 1 mol of metal oxide represented by General formula (1) below.
((Na.sub.1-zLi.sub.z).sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (in Formula, 0.70≦x≦0.99, 0.75≦y≦0.99, and 0<z<0.15, and x<y)  General formula (1)

The present invention provides a piezoelectric material not containing lead and potassium, having a high relative density, a high Curie temperature, and a high mechanical quality factor, and exhibiting good piezoelectricity. The piezoelectric material contains 0.04 percent by mole or more and 2.00 percent by mole or less of Cu relative to 1 mol of metal oxide represented by General formula (1) below.
((Na.sub.1-zLi.sub.z).sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (in Formula, 0.70≦x≦0.99, 0.75≦y≦0.99, and 0<z<0.15, and x<y)  General formula (1)

A piezoelectric ceramic electronic component that includes a piezoelectric ceramic body including at least one piezoelectric ceramic layer; and a plurality of electrodes on a surface or inside of the piezoelectric ceramic body and arranged so that the at least one piezoelectric ceramic layer is sandwiched between adjacent electrodes of the plurality of electrodes. The at least one piezoelectric ceramic layer is a ceramic sintered body containing a potassium sodium niobate-based compound and Mn. When the at least one piezoelectric ceramic layer sandwiched between the adjacent electrodes is divided into three equal parts in a thickness direction to sequentially define a first region, a second region, and a third region between the adjacent electrodes, a second Mn concentration in the second region is higher than a first Mn concentration in the first region and a third Mn concentration in the third region.