Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn.sup.4+/(Sn.sup.2++Sn.sup.4+) which is a ratio of Sn.sup.4+ to a total amount of Sn in the composite oxide is 0.124≤Sn.sup.4+/(Sn.sup.2++Sn.sup.4+)≤0.148.

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.

A piezoelectric composition including copper and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, in which an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium or niobium and tantalum, the copper is included in n mol % in terms of a copper element with respect to 1 mol of the complex oxide, and n satisfies 0.100≤n≤1.000.

A piezoelectric composition including copper and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, in which an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium or niobium and tantalum, the copper is included in n mol % in terms of a copper element with respect to 1 mol of the complex oxide, and n satisfies 0.100≤n≤1.000.

The present disclosure provides a visible light activated photocatalytic tile, comprising a porous ceramic tile; and a photocatalytic layer formed on one surface of the tile with a coating composition comprising an aqueous solvent and visible light activated photocatalytic particles.

The present disclosure provides a visible light activated photocatalytic tile, comprising a porous ceramic tile; and a photocatalytic layer formed on one surface of the tile with a coating composition comprising an aqueous solvent and visible light activated photocatalytic particles.

Provided is a piezoelectric material that is free of lead and potassium, has satisfactory insulation property and piezoelectricity, and has a high Curie temperature. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): General formula (1) (Na.sub.xM.sub.1-y)(Zr.sub.z(Nb.sub.1-wTa.sub.w).sub.y(Ti.sub.1-vSn.sub.v).sub.(1-y-z))O.sub.3 where M represents at least any one of Ba, Sr, and Ca, and relationships of 0.80≦x≦0.95, 0.85≦y≦0.95, 0<z≦0.03, 0≦v<0.2, 0≦w<0.2, and 0.05≦1−y−z≦0.15 are satisfied.

Provided is a piezoelectric material that is free of lead and potassium, has satisfactory insulation property and piezoelectricity, and has a high Curie temperature. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): General formula (1) (Na.sub.xM.sub.1-y)(Zr.sub.z(Nb.sub.1-wTa.sub.w).sub.y(Ti.sub.1-vSn.sub.v).sub.(1-y-z))O.sub.3 where M represents at least any one of Ba, Sr, and Ca, and relationships of 0.80≦x≦0.95, 0.85≦y≦0.95, 0<z≦0.03, 0≦v<0.2, 0≦w<0.2, and 0.05≦1−y−z≦0.15 are satisfied.

A lithium ion-conducting compound, having a garnet-like crystal structure, and having the general formula: Li.sub.n[A.sub.(3-a′-a″)A′.sub.(a′)A″.sub.(a″)][B.sub.(2-b′-b″)B′.sub.(b′)B″.sub.(b″)][C′.sub.(c′)C″.sub.(c″)]O.sub.12, where A, A′, A″ stand for a dodecahedral position of the crystal structure, where A stands for La, Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and/or Yb, A′ stands for Ca, Sr and/or Ba, A″ stands for Na and/or K, 0<a′<2 and 0<a″<1, where B, B′, B″ stand for an octahedral position of the crystal structure, where B stands for Zr, Hf and/or Sn, B′ stands for Ta, Nb, Sb and/or Bi, B″ stands for at least one element selected from the group including Te, W and Mo, 0<b′<2 and 0<b″<2, where C and C″ stand for a tetrahedral position of the crystal structure, where C stands for Al and Ga, C″ stands for Si and/or Ge, 0<c′<0.5 and 0<c″<0.4, and where n=7+a′+2.Math.a″−b′−2.Math.b″−3.Math.c′−4.Math.c″ and 5.5<n<6.875.