Disclosed is a sintered body comprising (a) a matrix material comprising at least one selected from ZnS and ZnSe, (b) an oxide that is present in a form of islands in the matrix material, comprising at least one metal selected from the group consisting of Ca, Sr and Ba, and (c) pores that are present in a form of islands in the matrix material. The sintered body has sufficient strength and an infrared stealth effect in an infrared region such as a MWIR and LWIR region.

Disclosed is a sintered body comprising (a) a matrix material comprising at least one selected from ZnS and ZnSe, (b) an oxide that is present in a form of islands in the matrix material, comprising at least one metal selected from the group consisting of Ca, Sr and Ba, and (c) pores that are present in a form of islands in the matrix material. The sintered body has sufficient strength and an infrared stealth effect in an infrared region such as a MWIR and LWIR region.

A thermoelectric material of the present invention includes copper, tin, and sulfur, wherein a ratio A/B of the number A of copper atoms to the number B of tin atoms is 0.5 to 2.5 and a content of a metal element other than copper and tin is 5 mol % or less with respect to total metal elements. Additionally, the thermoelectric material of the present invention has a thermal conductivity less than 1.0 W/(m.Math.K) at 200 to 400° C.

A thermoelectric material of the present invention includes copper, tin, and sulfur, wherein a ratio A/B of the number A of copper atoms to the number B of tin atoms is 0.5 to 2.5 and a content of a metal element other than copper and tin is 5 mol % or less with respect to total metal elements. Additionally, the thermoelectric material of the present invention has a thermal conductivity less than 1.0 W/(m.Math.K) at 200 to 400° C.

The present invention relates to a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries. The a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries includes a compound with an argyrodite-type crystal structure represented by the following Formula 1:
Li.sub.aPS.sub.bN.sub.cX.sub.d  [Formula 1] wherein 6≤a≤7, 3<b<6, 0<c≤1, 0<d≤2, and each X is the same or different halogen atom selected from the group consisting of chlorine (Cl), bromine (Br), and iodine (I).

The present invention relates to a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries. The a nitrogen-doped sulfide-based solid electrolyte for all-solid batteries includes a compound with an argyrodite-type crystal structure represented by the following Formula 1:
Li.sub.aPS.sub.bN.sub.cX.sub.d  [Formula 1] wherein 6≤a≤7, 3<b<6, 0<c≤1, 0<d≤2, and each X is the same or different halogen atom selected from the group consisting of chlorine (Cl), bromine (Br), and iodine (I).

A method for forming a transparent ceramic, in accordance with one embodiment, includes forming a green body by material jetting an ink, and processing the green body to form the ceramic to transparency. A product, in accordance with one embodiment, includes an ink for forming a transparent ceramic. The ink is physically characterized as having a density, surface tension, and viscosity configured to enable material jetting of the ink in contained, sequential droplets having a volume in the range of about 1 picoliter to about 1 nanoliter when jetted from a nozzle having an inner diameter in the range of about 10 microns to about 300 microns. A product, in accordance with another embodiment, includes a transparent ceramic, at least a portion of the transparent ceramic having layers of less than 50 microns per layer with physical characteristics of formation by material jetting.

The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi.sub.2WO.sub.6 is an orthorhombic system, Bi.sub.2S.sub.3 is a p-type semiconductor located on a (130) crystal face, MoS.sub.2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi.sub.2WO.sub.6/Bi.sub.2S.sub.3/MoS.sub.2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.

The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi.sub.2WO.sub.6 is an orthorhombic system, Bi.sub.2S.sub.3 is a p-type semiconductor located on a (130) crystal face, MoS.sub.2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi.sub.2WO.sub.6/Bi.sub.2S.sub.3/MoS.sub.2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.

A method for manufacturing a dense layer that includes: supplying a substrate and a suspension of non-agglomerated nanoparticles of a material P; depositing a layer on the substrate using the suspension; drying the layer thus obtained; and densifying the dried layer by mechanical compression and/or heat treatment. The method is characterised in that the suspension of non-agglomerated nanoparticles of material P includes nanoparticles of material P having a size distribution having a value of D50. The distribution includes nanoparticles of material P of a first size D1 between 20 nm and 50 nm, and nanoparticles of material P of a second size D2 characterised by the value D50 being at least five times less than that of D1, or the distribution has a mean size of nanoparticles of material P less than 50 nm, and a standard deviation to mean size ratio greater than 0.6.