Patent classifications
C04B35/62218
COMPOSITION FOR FORMING Mn-DOPED PZT-BASED PIEZOELECTRIC FILM AND Mn-DOPED PZT-BASED PIEZOELECTRIC FILM
A composition for forming a PZT-based piezoelectric film formed of Mn-doped composite metal oxides is provided, the composition including: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone, in which when a metal atom ratio in the composition is shown as Pb:Mn:Zr:Ti, the PZT-based precursors are contained so that a metal atom ratio of Pb is satisfied to be from 1.00 to 1.20, a metal atom ratio of Mn is satisfied to be equal to or greater than 0.002 and less than 0.05, a metal atom ratio of Zr is satisfied to be from 0.40 to 0.55, a metal atom ratio of Ti is satisfied to be from 0.45 to 0.60, and the total of Zr and Ti in a metal atom ratio is 1.
METHOD FOR PRODUCING CERAMIC MATRIX COMPOSITE
A production method for a ceramic matrix composite is comprised of: compounding an aggregate powder including a ceramic and a binder including at least one of thermoplastic resins and waxes to form a composition of the aggregate powder and the binder; pressing the composition to form sheets; accumulating fabrics of reinforcement fibers including the ceramic and the sheets alternately; pressing an accumulated body of the fabrics and the sheets; and generating a matrix combining the reinforcement fibers together.
Method for making ceramic thin exterior part
A method for making a thin ceramic part involves making a casting slurry including a ceramic powder, a solvent, a binder, a plasticizer, and a dispersant. The casting slurry is tape casted to achieve a single layer green tape. At least two single layer green tapes are laminated to form a green tape lamination. The green tape lamination is dry pressed, dried, shaped, degreased, and fired to achieve the exterior component required.
MEMBER FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.
PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT INCLUDING THE SAME, AND LIQUID DISCHARGE APPARATUS
Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing:
a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:
A.sub.1+δ[(Zr.sub.xTi.sub.1−a).sub.1−aNb.sub.a]O.sub.y Formula P
wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.
METHOD FOR MANUFACTURING FLEXIBLE GRAPHENE ELECTRICALLY CONDUCTIVE FILM
A method for manufacturing a flexible graphene electrically conductive film includes (1) providing a base and forming a graphene layer on a surface of the base; (2) providing polyvinyl alcohol, dissolving polyvinyl alcohol in water and heating to form a colloidal solution, which after cooling, forms a polyvinyl alcohol colloidal solution; and coating the polyvinyl alcohol colloidal solution on a surface of the graphene layer and drying so as to form a supporting layer on the surface of the graphene layer; (3) removing the base from the graphene layer; and (4) dissolving the supporting layer on the graphene layer in water so as to obtain a flexible graphene electrically conductive film that is free of surface residue.
Lithium composite oxide sintered body plate
Provided is a lithium complex oxide sintered plate for use in a positive electrode of a lithium secondary battery. The lithium complex oxide sintered plate has a structure in which a plurality of primary grains having a layered rock-salt structure are bonded, and has a porosity of 3 to 40%, a mean pore diameter of 15 μm or less, an open porosity of 70% or more, and a thickness of 15 to 200 μm. The plurality of primary grains has a primary grain diameter, i.e., a mean diameter of the primary grains, of 20 μm or less and a mean tilt angle of more than 0° to 30° or less. The mean tilt angle is a mean value of the angles defined by the (003) planes of the primary grains and the plate face of the lithium complex oxide sintered plate.
METHOD FOR PREPARING A NANOSHEET AND A MULTILAYER STRUCTURE
The present invention relates to a method for preparing a nanosheet including the steps of: depositing a solution onto a substrate to form a first layer, wherein the substrate is rotatable relative to the depositing solution; depositing and condensing target material onto the first layer to form a second layer; and separating the second layer from the first layer and the substrate to form a nanosheet. Also disclosed a multilayer structure including: a substrate; a first layer arranged to deposit onto the substrate, wherein the substrate is rotatable relative to the depositing of the first layer; and a second layer arranged to deposit onto the first layer and separable from the first layer to form a nanosheet.
(GaMe).SUB.2.O.SUB.3 .ternary alloy material, its preparation method and application in solar-blind ultraviolet photodetector
A (GaMe).sub.2O.sub.3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention is formed by solid solution of Ga.sub.2O.sub.3 and Me.sub.2O.sub.3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe).sub.2O.sub.3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me.sub.2O.sub.3 is higher than that of Ga.sub.2O.sub.3, and Ga.sup.3+ ions in Ga.sub.2O.sub.3 are partially replaced by Me.sup.3+ ions to obtain a higher band gap (GaMe).sub.2O.sub.3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.
SYSTEM, PROCESS AND RELATED SINTERED ARTICLE
A process of forming a sintered article includes heating a green portion of a tape of polycrystalline ceramic and/or minerals in organic binder at a binder removal zone to a temperature sufficient to pyrolyze the binder; horizontally conveying the portion of tape with organic binder removed from the binder removal zone to a sintering zone; and sintering polycrystalline ceramic and/or minerals of the portion of tape at the sintering zone, wherein the tape simultaneously extends through the removal and sintering zones.