A method of manufacturing a wafer mounting table according to an embodiment includes: (a) a step of loading a ceramic slurry containing a ceramic powder and a gelling agent into opening portions of a metal mesh, inducing a chemical reaction of the gelling agent to gelate the ceramic slurry, and then performing degreasing and calcining to prepare a ceramic-loaded mesh; (b) a step of sandwiching the ceramic-loaded mesh between a first ceramic calcined body and a second ceramic calcined body obtained by calcining after mold cast forming so as to prepare a multilayer body; and (c) a step of hot press firing the multilayer body to prepare the wafer-receiving table.

Methods for fabricating refractory metal scandate nanocomposite powders with homogeneous microstructured refractory metal grains and a uniform nanosized dispersion of scandia are provided. The powders prepared by the sol-gel methods have a spherical morphology, a narrow distribution of particle sizes and a very uniform dispersion of nanosized scandia particles joined to the tungsten grains. The powder particle sizes can range from nanometers to micrometers. The powders can be pressed into porous cathode structures that can be impregnated with emissive materials to produce high current density and long life cathodes for high-power terahertz vacuum electron devices. The sol-gel fabrication methods allow control over the materials, particle size, particle composition and pore size and distribution of the cathode structure by manipulation of the process parameters.

Methods for fabricating refractory metal scandate nanocomposite powders with homogeneous microstructured refractory metal grains and a uniform nanosized dispersion of scandia are provided. The powders prepared by the sol-gel methods have a spherical morphology, a narrow distribution of particle sizes and a very uniform dispersion of nanosized scandia particles joined to the tungsten grains. The powder particle sizes can range from nanometers to micrometers. The powders can be pressed into porous cathode structures that can be impregnated with emissive materials to produce high current density and long life cathodes for high-power terahertz vacuum electron devices. The sol-gel fabrication methods allow control over the materials, particle size, particle composition and pore size and distribution of the cathode structure by manipulation of the process parameters.

In accordance with one aspect of the present invention, a heating device is presented. The heating device includes a pyrocatalytic, non-stick coating disposed on at least one surface. The pyrocatalytic non-stick coating includes (i) a binder derived from a silane, a polysiloxane, a polysilazane, or combinations thereof; and (ii) a catalyst dispersed within the binder, wherein the catalyst comprises a pervoskite crystalline material, a pyrochlore crystalline material, a spinel crystalline material, an ilmenite crystalline material, or combinations hereof.

In accordance with one aspect of the present invention, a heating device is presented. The heating device includes a pyrocatalytic, non-stick coating disposed on at least one surface. The pyrocatalytic non-stick coating includes (i) a binder derived from a silane, a polysiloxane, a polysilazane, or combinations thereof; and (ii) a catalyst dispersed within the binder, wherein the catalyst comprises a pervoskite crystalline material, a pyrochlore crystalline material, a spinel crystalline material, an ilmenite crystalline material, or combinations hereof.

A general procedure applied to a variety of sol-gel precursors and solvent systems for preparing and controlling homogeneous dispersions of very small particles within each other. Fine homogenous dispersions processed at elevated temperatures and controlled atmospheres make a ceramic powder to be consolidated into a component by standard commercial means: sinter, hot press, hot isostatic pressing (HIP), hot/cold extrusion, spark plasma sinter (SPS), etc.

A general procedure applied to a variety of sol-gel precursors and solvent systems for preparing and controlling homogeneous dispersions of very small particles within each other. Fine homogenous dispersions processed at elevated temperatures and controlled atmospheres make a ceramic powder to be consolidated into a component by standard commercial means: sinter, hot press, hot isostatic pressing (HIP), hot/cold extrusion, spark plasma sinter (SPS), etc.

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Disclosed are a ten-membered fergusonite structure high-entropy oxide ceramic and a preparation method thereof, where the high-entropy oxide ceramic has a monoclinic structure, with a chemical formula of RENbO.sub.4, and the RE is any ten rare-earth cations selected from a group consisting of La.sup.3+, Ce.sup.3+, Pr.sup.3+, Nd.sup.3+, Sm.sup.3+, Eu.sup.3+, Gd.sup.3+, Dy.sup.3+, Ho.sup.3+, Er.sup.3+, Tm.sup.3+, Yb.sup.3+, Lu.sup.3+ and Y.sup.3+. The ten rare-earth cations have a molar ratio of 1:1:1:1:1:1:1:1:1:1 and equal share of RE position. According to the application, by adopting solid state reaction, the fergusonite structure high-entropy oxide ceramic with single-phase structure, uniform element distribution and stable phase is obtained. The high-entropy oxide ceramic prepared by the application is simple in process, uniform in chemical composition and microstructure, and convenient to realize on-demand regulation on properties through a combination of different elements.