An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2 range of 20 to 70; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.

The invention relates to a transparent composite material for various applications, having crystalline and amorphous inorganic materials with improved material properties.

A method for joining an optical part made of quartz glass and a supporting part made of ceramic includes forming a metal layer on a surface of the supporting part by electroless plating, polishing the formed metal layer with a polishing pad to form a first smoothed face on the supporting part surface, polishing a surface of the optical part with the polishing pad to form a second smoothed face, cleaning the first smoothed face and the second smoothed face with ultrasonic cleaning water, forming a first metal film on the first smoothed face by vapor deposition and forming a second metal film on the second smoothed face by vapor deposition, and joining the first metal film and the second metal film to each other by interatomic joining by atomic diffusion between the faces at which the first metal film and the second metal film contact with each other.

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90 is between the bevel of the device substrate and the handle substrate.

The invention relates to a method for joining a ceramic friction element (11) to a piezoelectric element (1), comprising, among other things, the following steps: pressing (14) a joining surface (10) of the friction element and a contact surface (9) of the piezoelectric element against each other with a low-melting glass mass (12) arranged therebetween and maintaining the pressing force for all subsequent steps; heating (17) the piezoelectric element and the friction element to a defined temperature above the Curie point of the piezoceramic material of the piezoelectric element and above the melting point of the low-melting glass mass; thereafter, while maintaining the temperature, applying an electric polarization voltage Up to electrodes of the piezoelectric element; removing the polarization voltage after the Curie point has been fallen below; and cooling the piezoelectric element and the friction element to room temperature without an electric voltage being applied to the electrodes.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

A joined body 20 according to the present invention includes a first member 22 made of a porous ceramic, a second member 24 made of a metal, and a joint 30 formed of an oxide ceramic of a transition metal, the joint 30 joining the first member 22 to the second member 24. Alternatively, a joined body may include a first member made of a dense material, a second member made of a dense material, and a joint formed of an oxide ceramic of a transition metal, the joint joining the first member to the second member.

A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.

A composite fiber stator ring for a gas turbine engine compressor includes a plurality of composite fiber vane structures. Each of the composite fiber vane structures includes a plurality of fiber plies. All of the fiber plies flow in a single direction at each joint of the corresponding composite fiber vane structure. The plurality of composite fiber vane structures are arranged circumferentially in a ring.

The bonded ceramic assembly of the present disclosure includes a first substrate made of ceramic, a second substrate made of ceramic, and a bonding layer positioned between the first substrate and the second substrate. The bonding layer contains aluminum, at least one of calcium and magnesium, a rare earth element, silicon, and oxygen. Out of a total 100 mass % of all of the components making up the bonding layer, the bonding layer contains from 33 mass % to 65 mass % aluminum in terms of oxide, a total of from 27 mass % to 60 mass % calcium and magnesium in terms of oxide, and from 2 mass % to 12 mass % rare earth element in terms of oxide. The silicon content, in terms of oxide, of the surface of the bonding layer is greater than in the interior of the bonding layer.