Patent classifications
C04B37/005
AlN JOINED BODY
An AlN joined body includes a first AlN member and a second AlN member that are joined together. The content of yttria in the first AlN member is equal to or below the detection limit. The second AlN member contains yttria.
COMPLIANT SUTURE-BASED JOINERY
Methods of forming joinery between components formed from dissimilar materials, and assemblies utilizing the joinery. The components include interface surfaces having complementary peaks and valleys that interlock. A compliant interface is formed between the interface surfaces and the interface can be configured to provide functionality.
CONTACT JOULE HEATING FOR SINTERING HIGH TEMPERATURE COATINGS
A method for forming a high temperature coating includes forming a pre-sintered ceramic coating on a ceramic composite substrate. The pre-sintered ceramic coating includes a plurality of ceramic particles. The method further includes sintering at least a portion of the pre-sintered ceramic coating by heating the portion of the pre-sintered ceramic coating to a sintering temperature of the plurality of ceramic particles using joule heating. The sintering temperature is greater than about 1000 degrees Celsius (° C.).
HIGH TEMPERATURE INTERFACES FOR CERAMIC COMPOSITES
An article for a high temperature environment includes a first ceramic composite substrate, a second ceramic composite substrate, and a high temperature interface between a first surface of the first ceramic composite substrate and a second surface of the second ceramic composite substrate. The high temperature interface includes at least one high temperature interface layer that includes a ceramic matrix and a plurality of fibers distributed through the ceramic matrix.
NON-CONTACT RADIATIVE HEATING FOR SINTERING HIGH TEMPERATURE COATINGS
A method for forming a high temperature coating includes forming a pre-sintered ceramic coating on a ceramic composite substrate. The pre-sintered ceramic coating comprises a plurality of ceramic particles. The method further includes sintering at least a portion of the pre-sintered ceramic coating by heating the portion of the pre-sintered ceramic coating to a sintering temperature of the pre-sintered ceramic coating using one or more non-contact radiative heating elements. The sintering temperature is greater than about 1000 degrees Celsius (° C.).
METHOD FOR ATOMIC DIFFUSION BONDING AND BONDED STRUCTURE
Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.
Semiconductor processing equipment with high temperature resistant nickel alloy joints and methods for making same
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
JOINT SURFACE COATINGS FOR CERAMIC COMPONENTS
An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.
Hybrid sandwich ceramic matrix composite
A hybrid sandwich ceramic matrix composite (CMC) may comprise a first facesheet, a second facesheet, and a core between and bonded to both of the first facesheet and the second facesheet. The first facesheet and the second facesheet may each include filaments in a ceramic matrix. The hybrid sandwich CMC may be configured for exposure to a thermal gradient in which the first facesheet is exposed to a higher temperature environment than the second facesheet. The first facesheet and the second facesheet may have at least closely matching coefficients of thermal expansion, and the first facesheet may have a higher compressive strength than the second facesheet.
Method of manufacturing epitaxy substrate
A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.