A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with a high purity silicon or a silicon alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck.

A method for making a braking band (2) for a brake disc (1) for a disc brake, comprising the following steps: a) preparing a mold (10) having an inner cavity (11), which comprises a first portion (11a) of a shape corresponding to the braking band (2) to be made; b) preparing a band preform (20) comprising a central preform (200), an upper outer preform (201) and a lower outer preform (202), said central preform (200) being made of porous ceramic material comprising silicon carbide (SiC), said upper outer preform (201) and lower outer preform (202) being made of porous ceramic material comprising silicon carbide (SiC) and infiltrated with silicon (SiC+Si), wherein a carbon barrier layer (201a, 200a, 200b, 202a) made of carbon is interposed between the upper outer preform (201) and the central preform (200) and between the lower outer preform (202) and the central preform (200), said preforms (200, 201, 202) having the shape of the braking band (2) to be made; c) placing said band preform (20) inside the mold at the first portion (11a) of said inner cavity (11); and d) injecting a liquid or semi-solid aluminum alloy inside the entire inner cavity (11) of the mold (11) to infiltrate the central preform (200) of said band preform (20) made of porous ceramic material with said aluminum alloy, obtaining at the first portion (11a) an aluminum metal matrix composite reinforced by said central preform (200) which defines the braking band (2) to be made. A braking band and a brake disc are made with at least the aforesaid method.

A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

An assembly includes a first member, a second member adjacent to the first member, and an aluminum material. At least one of the first member and the second member defines at least one trench. The aluminum material is disposed within the trench and bonds the first member to the second member along adjacent faces. In one form, a spacing between the first member and the second member along the adjacent faces is less than 5 m.

A method for producing a connection between two surfaces or surface sections of two ceramic parts comprises: provision of a first ceramic part and of a second ceramic part; provision of an active brazing solder material on at least one surface section of at least one of the ceramic parts; and heating the active brazing solder in a vacuum brazing process. The whole active brazing solder material is provided for connecting the first and the second ceramic part by a sputtering method, wherein at least one surface section of at least one of the ceramic parts, preferably of the two ceramic parts, is layered with a layer sequence of individual components of the active brazing solder material, wherein the average strength of the layers of an individual component of the active brazing solder is no more than 0.5%, in particular not more than 0.2%, preferably not more than 0.1% and especially preferably not more than 0.05% of the strength of the joining region.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

A joined body 20 according to the present invention includes a first member 22 made of a porous ceramic, a second member 24 made of a metal, and a joint 30 formed of an oxide ceramic of a transition metal, the joint 30 joining the first member 22 to the second member 24. Alternatively, a joined body may include a first member made of a dense material, a second member made of a dense material, and a joint formed of an oxide ceramic of a transition metal, the joint joining the first member to the second member.

A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al.sub.2O.sub.3, and is free from AlN.