A heat radiating substrate includes an insulating layer (11) (insulating substrate) and a circuit pattern (20) of a metal provided on the insulating layer (11) in direct contact with the insulating layer (11), in which a contour line of the circuit pattern (20) has a corner portion (27) that forms a curved line exhibiting a circular arc with a radius of 0.2 mm or more and 5 mm or less when viewed in a top view.

A semiconductor apparatus includes first and second semiconductor chips, and a circuit board. The circuit board is a laminated board sequentially including an insulating plate, a circuit layer, and a metal layer. The circuit layer includes a first mounting portion on which the first semiconductor chip is installed, a second mounting portion on which the second semiconductor chip is installed, and a first and second upper surface slit provided between the first and second mounting portion and extending in a first direction. The metal layer includes a first lower surface slit extending in the first direction. In a plan view, the first mounting portion, the first upper surface slit, the second upper surface slit, and the second mounting portion are provided side by side in the second direction. The first lower surface slit is located within a range defined by the first and second upper surface slit.

This pure copper plate includes Cu having a purity of 99.96 mass % or higher, with a remainder of unavoidable impurities, wherein an amount of P is 2 mass ppm or less, and a total amount of Pb, Se, and Te is 10 mass ppm or less. The amount of S may be in a range of 2 mass ppm or more and 20 mass ppm or less.

In some examples, techniques of repairing and/or reinforcing oxide-oxide ceramic matrix composite (CMC) materials using a metallic material. In one example, a method including applying a metallic material at an edge of an oxide-oxide CMC substrate; and heating the metallic material to diffuse the metal material into the oxide-oxide CMC substrate at the edge. In another example, a method including applying a metallic material onto a damaged area of the oxide-oxide CMC; applying a reinforcing phase material onto the damaged area of the oxide-oxide CMC; and heating the metallic material to diffuse the metallic material into the oxide-oxide CMC and attach the reinforcing phase material to the damaged area of the oxide-oxide CMC.

A heat dissipation member dissipates heat generated at a heat source. The heat dissipation member may include a substrate having a porosity ratio of 5 volume % or less; and an inorganic porous layer disposed on a surface of the substrate, wherein the inorganic porous layer may have a porosity ratio ranging from 25 volume % or more to 85 volume % or less and have lower thermal conductivity than the substrate. In this heat dissipation member, 15 mass % or more of constituents of the inorganic porous layer may be alumina.

The present invention relates to a method for producing a metal-ceramic substrate (1) comprising: —providing a ceramic element (30) and at least one metal layer (10), wherein the ceramic element (30) and the at least one metal layer (10) extend along a main extension plane (HSE), —joining the ceramic element (30) to the at least one metal layer (10) to form a metal-ceramic substrate (1), in particular by means of a direct metal joining method, a hot isostatic pressing method and/or a soldering method, and —machining the at least one metal layer (10) by means of a machine tool (40) and/or laser light in order to define a geometry, at least in some portions, of a side face (15) of the at least one metal layer (10) not running parallel to the main extension plane (HSE).

The invention relates to a process for producing a metal-ceramic substrate (1), comprising: —providing a ceramic element (10), a metal ply (40) and at least one metal layer (30), —forming an ensemble (18) of the ceramic element (10), the metal ply (40) and the at least one metal layer (30), —forming a gas-tight container (30) surrounding the ceramic element (10), wherein the at least one metal layer (30) is arranged between the ceramic element (10) and the metal ply (40) in the container, and—forming the metal-ceramic substrate (1) by hot isostatic pressing.

A method includes applying a sintering precursor material layer to each of a first surface and a second surface of a ceramic tile, and assembling a precursor assembly of a direct bonded copper (DBC) substrate by coupling a first leadframe on the sinter precursor material layer on the first surface of the ceramic tile and a second leadframe on the second surface of the sinter precursor material layer on a second surface of the ceramic tile such that the ceramic tile is disposed between the first leadframe and the second leadframe. The method further includes sinter bonding the first leadframe and the second leadframe to the ceramic tile to form a sinter bonded DBC substrate.

A pressure measuring device includes a ceramic pressure sensor including a ceramic measuring membrane and a sensor mounting configured to secure the pressure sensor such that a membrane region of the measuring membrane surrounded by a membrane edge is contactable with a medium having a pressure to be measured. The sensor mounting includes a titanium or titanium alloy mounting element including an opening through which the membrane region is contactable with the medium. The membrane edge is connected directly with the mounting element by a diffusion weld produced by a diffusion welding method.

A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2),
wherein the first thickness (D1) is less than 250 μm and the second thickness (D2) is greater than 200 μm and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1)
has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.