A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

A bonded assembly according to the present embodiment, includes a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag. In the bonded assembly, in a measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, a Ag-rich region having a Ag concentration of 60 at % or more has an area ratio of 70% or less to a Ag-poor region having a Ag concentration of 50 at % or less.

A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

A method of preparing a substrate having a wetting surface, including confirming the presence of an open, interconnected pore network in a ceramic substrate to be wetted with a first metal, filling the open, interconnected pore network with a second metal,

exuding the second metal to coat the surface of the substrate, and wetting the substrate with the first metal. The ceramic substrate is not decomposed by the first metal and the ceramic substrate is not decomposed by the second metal.

A light-emitting ceramic and a light-emitting device. The light-emitting ceramic comprises a YAG substrate and light-emitting centers and diffusion particles evenly dispersed in the YAG substrate. The light-emitting centers are lanthanide-doped YAG fluorescent powder particles of 10-20 μm in grain size. The particle size of the scattering particles is 20-50 nm. The YAG substrate is a lanthanide-doped YAG ceramic. Also, the grain size of the YAG substrate is less than the grain size of the YAG fluorescent powder particles.

There are provide a metal/ceramic bonding substrate wherein the bonding strength of an aluminum plate bonded directly to a ceramic substrate is higher than that of conventional metal/ceramic bonding substrates, and a method for producing the same. The metal/ceramic bonding substrate is produced by a method including the steps of: arranging a ceramic substrate 10 in a mold 20; putting the mold 20 in a furnace; lowering an oxygen concentration to 25 ppm or less and a dew point to −45° C. or lower in the furnace; injecting a molten metal of aluminum into the mold 20 so as to allow the molten metal to contact the surface of the ceramic substrate 10; and cooling and solidifying the molten metal to form a metal plate 14 for circuit pattern of aluminum on one side of the ceramic substrate 10 to bond one side of the metal plate 14 for circuit pattern directly to the ceramic substrate 10, while forming a metal base plate 12 of aluminum on the other side of the ceramic substrate 10 to bond the metal base plate 12 directly to the ceramic substrate 10.

An adapter element (10) for connecting an electronic component (30) to a heat sink element (20), including an insulation layer (15) extending along a main extension plane (HSE), and at least a first web element (11) and a second web element (12), which are arranged next to each other in a direction parallel to the main extension plane (HSE), forming a free area (13), which, in the assembled state, are arranged between the insulating layer (15) and the electronic component (30) in a direction running perpendicular to the main extension plane (HSE), and on whose front sides (18) facing away from the insulating layer (15) the electronic component (30) is arranged in the assembled state, wherein a distance (A) between the first web element (11) and the second web element (12), measured in a plane parallel to the main extension plane (HSE), is smaller than 350 μm.

A bonded body includes an aluminum member made of an aluminum alloy and a copper member made of copper or a copper alloy, in which the aluminum member is made of an Al—Mn-based alloy containing Mn, an Mn concentration C.sub.0 of the entire aluminum member is in a range of 0.4 mass % or more and 1.5 mass % or less, and, when an Mn concentration in a region excluding a precipitate in the aluminum member is defined as an Mn solid solution concentration C.sub.1 and a value obtained by subtracting the Mn solid solution concentration C.sub.1 from the Mn concentration C.sub.0 of the entire aluminum member is defined as an Mn precipitate concentration C.sub.2, a ratio C.sub.1/C.sub.2 of the Mn solid solution concentration C.sub.1 to the Mn precipitate concentration C.sub.2 is in a range of 0.1 or more and 2.7 or less.

A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.