A method of forming a hybrid metal composite structure including at least one metal ply. The method includes forming at least one metal ply, forming the at least one metal ply comprising forming at least one perforation in the at least one metal ply, abrasively blasting at least one surface of the at least one metal ply to coarsen the at least one surface of the metal ply, and exposing the at least one metal ply to at least one of an acid or a base. The method further includes disposing at least one fiber composite material structure adjacent the at least one metal ply. Related methods of forming a portion of a rocket case and related hybrid metal composite structures are also disclosed.

A method of making a stoichiometric monazite (LaPO.sub.4) composition or a mixture of LaPO.sub.4 and LaP.sub.3O.sub.9 composition, as defined herein. Also disclosed is a method of joining or sealing materials with the compositions, as defined herein.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment a multilayer component includes a ceramic main element and at least one metal structure, wherein the metal structure is cosintered and wherein main element is a varistor ceramic having 90 mol % of ZnO, from 0.5 to 5 mol % of Sb.sub.2O.sub.3, from 0.05 to 2 mol % of Co.sub.3O.sub.4, Mn.sub.2O.sub.3, SiO.sub.2 and/or Cr.sub.2O.sub.3, and <0.1 mol % of B.sub.2O.sub.3, Al.sub.2O.sub.3 and/or NiO.

There is provided a copper/ceramic bonded body of the present invention in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other, in which an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member, a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and the active metal is present in the Mg solid solution layer.

A heater includes an aluminum nitride (AlN) substrate and a heating layer. The heating layer is made from a molybdenum material and is bonded to the AlN substrate via transient liquid phase bonding. The heater can also include a routing layer and a plurality of first conductive vias connecting the heating layer to the routing layer. The routing layer and the plurality of first conductive vias can be made from the molybdenum material and at least one of the routing layer and the plurality of first conductive vias are bonded to the AlN substrate via a transient liquid phase bond. A plurality of second conductive vias connecting the routing layer to a surface of the AlN substrate can be included and the plurality of second conductive vias are made of the molybdenum material and can be bonded to the AlN substrate via a transient liquid phase bond.

A method of making a stoichiometric monazite (LaPO.sub.4) composition or a mixture of LaPO.sub.4 and LaP.sub.3O.sub.9 composition, as defined herein. Also disclosed is a method of joining or sealing materials with the compositions, as defined herein.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

A light-emitting ceramic and a light-emitting device. The light-emitting ceramic comprises a YAG substrate and light-emitting centers and diffusion particles evenly dispersed in the YAG substrate. The light-emitting centers are lanthanide-doped YAG fluorescent powder particles of 10-20 m in grain size. The particle size of the scattering particles is 20-50 nm. The YAG substrate is a lanthanide-doped YAG ceramic. Also, the grain size of the YAG substrate is less than the grain size of the YAG fluorescent powder particles.

A ceramic component is provided that is suitable to be placed in high temperature environment. The component includes a first member that is formed of a first material, and a ceramic layer that is bonded to a surface of the first member, which is a side exposed to the high temperature environment and that is formed of a ceramic material having a higher heat resistance than that of the first member. A bonding portion between the first member and the ceramic layer is formed of a composite material having the first material and the ceramic material, and a gradient composition in which an abundance ratio of the first material gradually decreases and an abundance ratio of the ceramic material gradually increases in a direction from the first member to the ceramic layer.

A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.