An article includes a ceramic-based substrate and a barrier layer on the ceramic-based substrate. The barrier layer includes a matrix of barium-magnesium alumino-silicate or SiO.sub.2, a dispersion of silicon oxycarbide particles in the matrix, and a dispersion of particles, of the other of barium-magnesium alumino-silicate or SiO.sub.2, in the matrix.

A coating method includes depositing a slurry including a coarsely particulate ceramic and a finely particulate ceramic on a base material configured with an oxide-based ceramics matrix composite such that a proportion of coarse particles decreases towards a surface of the base material; forming a bond coating by performing a heat treatment on the base material on which the slurry has been deposited; and forming a top coating by thermally spraying a ceramic onto the bond coating. The oxide-based ceramics matrix composite is an alumina silica type oxide-based ceramics matrix composite. The coarsely particulate ceramic and the finely particulate ceramic are alumina-based powder.

A coating method includes depositing a slurry including a coarsely particulate ceramic and a finely particulate ceramic on a base material configured with an oxide-based ceramics matrix composite such that a proportion of coarse particles decreases towards a surface of the base material; forming a bond coating by performing a heat treatment on the base material on which the slurry has been deposited; and forming a top coating by thermally spraying a ceramic onto the bond coating. The oxide-based ceramics matrix composite is an alumina silica type oxide-based ceramics matrix composite. The coarsely particulate ceramic and the finely particulate ceramic are alumina-based powder.

A method for making a ceramic matrix composite component includes densifying a fibrous preform of the component with a ceramic matrix to form an intermediate component; infiltrating a hole in the intermediate component with an infiltrate material comprising a solid and a metallic alloy whose reaction forms a carbide, silicide, boride or combination thereof, heating the infiltrate material to a temperature in excess of a melting point of the metallic alloy; and sequentially cooling regions of the hole starting from an interior end of the hole to the outer surface of the intermediate component to form a solidified through-thickness reinforcement element. The hole extends in a through-thickness direction and is open to an exterior surface of the intermediate component.

A method for making a ceramic matrix composite component includes densifying a fibrous preform of the component with a ceramic matrix to form an intermediate component; infiltrating a hole in the intermediate component with an infiltrate material comprising a solid and a metallic alloy whose reaction forms a carbide, silicide, boride or combination thereof, heating the infiltrate material to a temperature in excess of a melting point of the metallic alloy; and sequentially cooling regions of the hole starting from an interior end of the hole to the outer surface of the intermediate component to form a solidified through-thickness reinforcement element. The hole extends in a through-thickness direction and is open to an exterior surface of the intermediate component.

A method for forming a high temperature coating includes applying carbon powder to a surface of a carbon/carbon (C/C) composite substrate to force the carbon powder into one or more surface voids of the surface of the C/C composite substrate. The carbon powder has a substantially same composition and morphology as a surface portion of the C/C composite substrate. The method includes applying a metal slurry to the surface of the C/C composite substrate following the application of the carbon powder and reacting a metal of the metal slurry with carbon of the carbon powder and carbon of the surface portion of the C/C composite substrate to form a metal-rich antioxidant layer of a metal carbide on the C/C composite substrate.

A method for forming a high temperature coating includes applying carbon powder to a surface of a carbon/carbon (C/C) composite substrate to force the carbon powder into one or more surface voids of the surface of the C/C composite substrate. The carbon powder has a substantially same composition and morphology as a surface portion of the C/C composite substrate. The method includes applying a metal slurry to the surface of the C/C composite substrate following the application of the carbon powder and reacting a metal of the metal slurry with carbon of the carbon powder and carbon of the surface portion of the C/C composite substrate to form a metal-rich antioxidant layer of a metal carbide on the C/C composite substrate.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Methods of forming sintered coatings are provided, along with the resulting coatings on a substrate. The sintered coating may comprise a rare earth compound and a sintering aid, with the rare earth compound has the formula: A.sub.1−bB.sub.bZ.sub.1−dD.sub.dMO.sub.6 where A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; b is 0 to about 0.5; Z is Hf, Ti, or a mixture thereof; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to about 0.5; and M is Ta, Nb, or a mixture thereof. The coating may be densified at a sintering temperature, such as 1300° C. to 1600° C.