This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.

A technique is described for the application of three-dimensional (3D) relief to a substrate such as a ceramic tile using digital inkjet technology. In an example embodiment, the introduced technique includes application of binder ink to a portion of the surface of a substrate using a digital inkjet process. This binder ink forms a barrier layer which protects the portion of the surface of the substrate. Next, a brushing process is applied to remove unprotected portions of the substrate, thereby forming the 3D relief in the substrate.

Embodiments of the present disclosure generally relate to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A substrate, such as a silicon wafer, is provided as a base for forming an optical device. A transparent layer is disposed on a first surface of the substrate, and a structure layer is disposed on the transparent surface. An etch mask layer is disposed on a second surface of the substrate opposite the first surface, and a window or opening is formed in the etch mask layer to expose a portion of the second surface of the substrate. A plurality of nanostructures is then formed in the structure layer, and a portion of the substrate extending from the window to the transparent layer is removed. A portion of the transparent layer having nanostructures disposed thereon is then detached from the substrate to form an optical device.

Embodiments of the present disclosure generally relate to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A substrate, such as a silicon wafer, is provided as a base for forming an optical device. A transparent layer is disposed on a first surface of the substrate, and a structure layer is disposed on the transparent surface. An etch mask layer is disposed on a second surface of the substrate opposite the first surface, and a window or opening is formed in the etch mask layer to expose a portion of the second surface of the substrate. A plurality of nanostructures is then formed in the structure layer, and a portion of the substrate extending from the window to the transparent layer is removed. A portion of the transparent layer having nanostructures disposed thereon is then detached from the substrate to form an optical device.

A method of controlling a substrate etching process includes disposing a bottom surface or a top surface of a substrate adjacent to volume of etching fluid to produce an etchant-substrate interface and heating the etchant-substrate interface via spatially controlled electromagnetic radiation. The method also includes transmitting a monitoring beam through the substrate, the substrate and volume of etching fluid being at least partially transparent at the wavelength range of the monitoring beam and measuring a property of the substrate surface during the substrate etching process via the monitoring beam to produce a real-time measured property for the substrate. A corresponding etching system and computer-program product is also disclosed herein.

A method of controlling a substrate etching process includes disposing a bottom surface or a top surface of a substrate adjacent to volume of etching fluid to produce an etchant-substrate interface and heating the etchant-substrate interface via spatially controlled electromagnetic radiation. The method also includes transmitting a monitoring beam through the substrate, the substrate and volume of etching fluid being at least partially transparent at the wavelength range of the monitoring beam and measuring a property of the substrate surface during the substrate etching process via the monitoring beam to produce a real-time measured property for the substrate. A corresponding etching system and computer-program product is also disclosed herein.

A resistance temperature detector (RTD) that uses a ceramic matrix composite (CMC), such as a silicon carbide fiber-reinforced silicon carbide matrix, as an active temperature sensing element, which can operate at temperatures greater than 1000 C. or even 1600 C. Conductive indium tin oxide or a single elemental metal such as platinum is deposited on a dielectric or insulating layer such as mullite or an environmental barrier coating (EBC) on the substrate. Openings in the layer allow etching of the CMC surface in order to make high quality ohmic contacts with the conductive material, either directly or through a silicide diffusion barrier such as ITO. The RTD can measure both temperature and strain of the CMC. The use of an EBC, which typically is deposited on the CMC by the manufacturer, as the insulating or dielectric layer can be extended to other devices such as strain gages and thermocouples that use the CMC as a sensing element. The EBC can be masked and etched to form the openings. A conductive EBC can be used as the silicide diffusion barrier.

A resistance temperature detector (RTD) that uses a ceramic matrix composite (CMC), such as a silicon carbide fiber-reinforced silicon carbide matrix, as an active temperature sensing element, which can operate at temperatures greater than 1000 C. or even 1600 C. Conductive indium tin oxide or a single elemental metal such as platinum is deposited on a dielectric or insulating layer such as mullite or an environmental barrier coating (EBC) on the substrate. Openings in the layer allow etching of the CMC surface in order to make high quality ohmic contacts with the conductive material, either directly or through a silicide diffusion barrier such as ITO. The RTD can measure both temperature and strain of the CMC. The use of an EBC, which typically is deposited on the CMC by the manufacturer, as the insulating or dielectric layer can be extended to other devices such as strain gages and thermocouples that use the CMC as a sensing element. The EBC can be masked and etched to form the openings. A conductive EBC can be used as the silicide diffusion barrier.

Provided herein is a method for forming a periodic microstructure on a surface of zirconia-based ceramics, which are not easily mechanically workable, without causing thermal adverse effects. A zirconia-based ceramic having a surface periodic microstructure is also provided. A linearly or circularly polarized laser beam is irradiated to a zirconia-based ceramic surface, and periodic irregularities are formed in a spot of the laser beam. Stripe-pattern irregularities parallel to the direction of polarization can be formed in a spot of a laser beam by irradiating a linearly polarized ultrashort pulsed-laser beam to a zirconia-based ceramic surface. A mesh-like raised region and a dot-like recessed region can be periodically formed by irradiating a circularly polarized ultrashort pulsed-laser beam to a ceramic surface.

Provided herein is a method for forming a periodic microstructure on a surface of zirconia-based ceramics, which are not easily mechanically workable, without causing thermal adverse effects. A zirconia-based ceramic having a surface periodic microstructure is also provided. A linearly or circularly polarized laser beam is irradiated to a zirconia-based ceramic surface, and periodic irregularities are formed in a spot of the laser beam. Stripe-pattern irregularities parallel to the direction of polarization can be formed in a spot of a laser beam by irradiating a linearly polarized ultrashort pulsed-laser beam to a zirconia-based ceramic surface. A mesh-like raised region and a dot-like recessed region can be periodically formed by irradiating a circularly polarized ultrashort pulsed-laser beam to a ceramic surface.