An object of the present disclosure is to provide the preparation and application of a low-B high-resistance high-temperature thermistor material with wide temperature range. The thermistor material uses CaCO.sub.3, Y.sub.2O.sub.3, Nb.sub.2O.sub.5, CeO.sub.2 and MoO.sub.3 as raw materials. The Ca.sub.1-yY.sub.yMoO.sub.4-xCeNbO.sub.4 (1≤x≤3, 0.01≤y≤0.2) high-temperature thermistor material having low-B high-resistance and wide temperature region is obtained by mixing grinding, calcination, cold isostatic pressing, high-temperature sintering and coating electrode. The material constant B.sub.200° C./600° C. is 1800 K-4000 K, and the resistivity at 25° C. is 8.0×10.sup.5 Ω.Math.cm-6.0×10.sup.7 Ω.Math.cm. The low-B high-resistance wide temperature range high-temperature thermistor material prepared by the disclosure has stable performance and good consistency. The thermistor material has obvious negative temperature coefficient characteristics in the range of 25° C.-1000° C. and is suitable for manufacturing wide temperature range high-temperature thermistor.

Embodiments are related generally to conductive interconnects formed on substrates, and more particularly to a glass ceramic, or glass-ceramic substrate having copper interconnects disposed thereon.

A multilayer ceramic substrate that includes a first layer positioned at a surface of the multilayer ceramic substrate, a second layer adjacent the first layer and positioned inward of the first layer, and a surface layer electrode disposed on a surface of the first layer. The first layer has a porosity of 13% or less and a maximum pore size of 10 μm or less. The second layer has a porosity of 14% or less and a maximum pore size of 11 μm or less.

The localized formation of graphene and diamond like structures on the surface of boron carbide is obtained due to exposure to high intensity laser illumination. The graphitization involves water vapor interacting with the laser illuminated surface of boron carbide and leaving behind excess carbon. The process can be done on the micrometer scale, allowing for a wide range of electronic applications. Raman is a powerful and convenient technique to routinely characterize and distinguish the composition of Boron Carbide (B.sub.4C), particularly since a wide variation in C content is possible in B.sub.4C. Graphitization of 1-3 μm icosahedral B.sub.4C powder is observed at ambient conditions under illumination by a 473 nm (2.62 eV) laser during micro-Raman measurements. The graphitization, with ˜12 nm grain size, is dependent on the illumination intensity. The process is attributed to the oxidation of B.sub.4C to B.sub.2O.sub.3 by water vapor in air, and subsequent evaporation, leaving behind excess carbon. The effectiveness of this process sheds light on amorphization pathways of B.sub.4C, a critical component of resilient mechanical composites, and also enables a means to thermally produce graphitic contacts on single crystal B.sub.4C for nanoelectronics.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

The present invention relates to a device comprising a cable and/or a cable accessory, said cable and/or said cable accessory comprising at least one composite layer obtained from a composite composition based on at least one aluminosilicate geopolymer composition and on at least one low-viscosity organic polymer or oligomer, and also to the process for preparing same.

Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite. Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 m or more and 800 m or less, 20-30 mass % of silicon carbide having a particle diameter of 8 m or more and less than 80 m, and 5-10 mass % of silicon carbide having a particle diameter of less than 8 m.

A composition consisting essentially of (a) 1 to 30% by weight of a 1 to 90% by weight aqueous phosphoric acid and/or a hydrogen phosphate; (b) 1 to 40% by weight of a compound selected from the group of oxides, hydroxides and oxide hydrates of magnesium, calcium, iron, zinc and copper; (c) 40 to 95% by weight of a particulate filler selected from the group of glass; mono-, oligo- and polyphosphates of magnesium, calcium, barium and aluminium; calcium sulphate; barium sulphate; simple and complex silicates; simple and complex aluminates; simple and complex titanates; simple and complex zirconates; zirconium dioxide; titanium dioxide, aluminium oxide; silicon oxide; silicon carbide; aluminium nitride; boron nitride and silicon nitride; (d) 1 to 10% by weight of an urea compound selected from the group consisting of imidazolidine-2-on, allantoin and imidazolidinyl urea; and (e) 0 to 15% by weight of a component differing from (a) to (d).

The present invention relates to a device comprising a cable and/or a cable accessory, said cable and/or said cable accessory comprising at least one composite layer obtained from a composite composition based on at least one cellulose derivative, at least one organic compound having a boiling point or a decomposition temperature above about 100 C. and at least one cement composition selected from an aluminosilicate geopolymer composition and a magnesium-based composition, as well as to a method of manufacturing such a device.

A nitride-based ceramics resin composite body having thermal conductivity, electrical insulation, and adhesion to adherends equal to conventional products, and having improved heat resistance reliability during the reflow process, and a thermal conductive insulating adhesive sheet using the same are provided. A nitride-based ceramics resin composite body in which a thermosetting resin composition is impregnated in a porous nitride-based ceramics sintered body is provided. The thermosetting resin composition includes a specific epoxy resin and a bismaleimide triazine resin, and a water absorption of the thermosetting resin composition in a completely cured state measured in accordance with method A in JIS K7209 (2000) is 1% by mass or less.