The purpose of the present invention is to provide an electronic component in which a copper electrode and an inorganic substrate exhibit strong adhesion to each other. A method for producing an electronic component according to the present invention comprises: an application step wherein a paste is applied onto an inorganic substrate, which paste contains copper particles, copper oxide particles and/or nickel oxide particles, and inorganic oxide particles having a softening point; a sintering step wherein a sintered body which contains at least copper is formed by means of heating in an inert gas atmosphere at a temperature that is less than the softening point of the inorganic oxide particles but not less than the sintering temperature of the copper particles; and a softening step wherein heating is carried out in an inert gas atmosphere at a temperature that is not less than the softening point of the inorganic oxide particles.

Disclosed is a method for producing a porous monolithic material from at least one powder, preferably mineral, the method including at least one step of low-temperature compression of a mixture based on powder and at least one solvent, preferably water. The materials produced by the method have improved mechanical properties compared to the prior art materials. The materials for medical application, such as hydroxyapatite, also have improved biocompatibility compared to the prior art materials. Also disclosed are materials produced by the method.

A thermal formation sintering compound containing a binder, a sinterable powder material and a pore formation material, for formation into a predetermined shape in a thermal formation step, removal of the binder in a degreasing step, and sintering of the powder material in a sintering step is provided. The binder contains a low-temperature draining component which melts in the thermal formation step, begins draining at a temperature lower than a draining temperature of the pore formation material, and drains at a temperature lower than a temperature at which the pore formation material drains; and a high-temperature draining component which melts in the thermal formation step, begins draining after the pore formation material begins draining, and drains at a temperature higher than does the pore formation material.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

The localized formation of graphene and diamond like structures on the surface of boron carbide is obtained due to exposure to high intensity laser illumination. The graphitization involves water vapor interacting with the laser illuminated surface of boron carbide and leaving behind excess carbon. The process can be done on the micrometer scale, allowing for a wide range of electronic applications. Raman is a powerful and convenient technique to routinely characterize and distinguish the composition of Boron Carbide (B.sub.4C), particularly since a wide variation in C content is possible in B.sub.4C. Graphitization of 1-3 m icosahedral B.sub.4C powder is observed at ambient conditions under illumination by a 473 nm (2.62 eV) laser during micro-Raman measurements. The graphitization, with 12 nm grain size, is dependent on the illumination intensity. The process is attributed to the oxidation of B.sub.4C to B.sub.2O.sub.3 by water vapor in air, and subsequent evaporation, leaving behind excess carbon. The effectiveness of this process sheds light on amorphization pathways of B.sub.4C, a critical component of resilient mechanical composites, and also enables a means to thermally produce graphitic contacts on single crystal B.sub.4C for nanoelectronics.

A multilayer ceramic substrate that includes a first layer positioned at a surface of the multilayer ceramic substrate, a second layer adjacent the first layer and positioned inward of the first layer, and a surface layer electrode disposed on a surface of the first layer. The first layer has a porosity of 13% or less and a maximum pore size of 10 m or less. The second layer has a porosity of 14% or less and a maximum pore size of 11 m or less.

A resin-impregnated boron nitride sintered body having superior thermal conductivity and superior strength, and a resin-impregnated boron nitride sintered body having superior conductivity and small anisotropy of thermal conductivity are provided. A resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally; and 10 to 70 volume % of a resin; wherein the boron nitride sintered body has a porosity of 10 to 70%; the boron nitride particles of the boron nitride sintered body has an average long diameter of 10 m or more; the boron nitride sintered body has a graphitization index by powder X-ray diffractometry is 4.0 or less; and an orientation degree of the boron nitride particles of the boron nitride sintered body by I.O.P is 0.01 to 0.05 or 20 to 100; and a resin-impregnated boron nitride sintered body, including: 30 to 90 volume % of a boron nitride sintered body having boron nitride particles bonded three-dimensionally is provided.

The invention relates to a process for metallizing ferrite ceramics, which comprises the following steps: arrangement of a. contact element composed of copper or a copper alloy on a surface of the ferrite ceramic, melting of the contact element at least in the region in which the contact element contacts the surface of the ferrite ceramic, and cooling of the contact element and the ferrite ceramic to below the melting point of copper or the copper alloy.

The disclosed method proposes, for the mixing of a solid and dry granular mixture and a liquid bituminous binder, the solid and dry granular mixture being a mixture of two fractions of constituents, one of which is a coarse fraction including aggregates, the other fraction a fraction of submillimeter fines, that the mixing includes at least two consecutive mixing steps: an aggregate-preimpregnation step, consisting of mixing the coarse fraction of the granular mixture with a part of the bituminous binder, in a quantity at least sufficient for coating the aggregates and at least partially filling the open pore spaces of the aggregates; and a covering mixing step, which consists of mixing the preimpregnated coarse fraction of bituminous binder and originating from the first mixing step, with the balance of the bituminous binder, required for the manufacture of the electrodes, and with the fraction of fines of the granular mixture.

An object is to provide a graphite-copper composite electrode material that is capable of reducing electrode wear to a practically usable level and to provide an electrical discharge machining electrode using the material. A graphite-copper composite electrode material includes a substrate comprising a graphite material and having pores, and copper impregnated in the pores of the substrate, the electrode material having an electrical resistivity of 2.5 m or less, preferably 1.5 m or less, more preferably 1.0 m or less. It is desirable that the substrate comprising the graphite material have an anisotropy ratio of 1.2 or less. It is desirable that an impregnation rate of the copper in the electrode material is 13% or greater. It is desirable that the substrate comprising the graphite material have a bulk density of from 1.40 Mg/m.sup.3 to 1.85 Mg/m.sup.3.