The present disclosure is directed to a low cost sintering process for the preparation of gadolinium oxysulfide having a general formula of Gd.sub.2O.sub.2S, referred to as GOS, scintillation ceramics, comprising uniaxial hot pressing primary sintering and hot isostatic pressing secondary sintering.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.

A compact, a superabrasive compact and a method of making the compact and superabrasive compact are disclosed. A compact may include a plurality of carbide particles, a binder, and a species. The binder may be dispersed among the plurality of tungsten carbide particles. The species may be dispersed in the compact, wherein the binder has a melting point from about 600° C. to about 1350° C. at ambient pressure. A superabrasive compact may include a diamond table and a substrate. The diamond table may be attached to the substrate. The substrate may have a binder. The melting point of the binder is from about 600° C. to about 1350° C. at high pressure from about 30 kbar to about 100 kbar.

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).

Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba.sub.3Co.sub.2Fe.sub.24O.sub.41 (Co.sub.2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.

There is provided a polycrystalline cubic boron nitride containing a cubic boron nitride at a content greater than or equal to 98.5% by volume, the polycrystalline cubic boron nitride having a dislocation density less than or equal to 8×10.sup.15/m.sup.2.

Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

A bismuth and magnesium co-doped lithium niobate crystal includes Li.sub.2CO.sub.3, Nb.sub.2O.sub.5, Bi.sub.2O.sub.3 and MgO, wherein the molar ratio of [Li] and [Nb] is 0.90-1.00, the molar percentage of Bi.sub.2O.sub.3 in the mixture is 0.25-0.80%, and the molar percentage of MgO in the mixture is 3.0-7.0%. The bismuth and magnesium co-doped lithium niobate crystal has enhanced photorefraction, improved photorefractive sensitivity, shortened holographic grating saturation writing time, and the photorefractive diffraction efficiency can reach up to 17%. The response time is only 170 ms, when the holographic storage experiment is carried out using 488 nm continuous laser. Therefore, this crystal can be used in the field of holographic imaging.

A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.

A sintered MnZn ferrite body containing main components comprising 53.30-53.80% by mol of Fe calculated as Fe.sub.2O.sub.3, 6.90-9.50% by mol Zn calculated as ZnO, and the balance of Mn calculated as MnO, and sub-components comprising 0.003-0.020 parts by mass of Si calculated as SiO.sub.2, more than 0 parts and 0.35 parts or less by mass of Ca calculated as CaCO.sub.3, 0.30-0.50 parts by mass of Co calculated as Co.sub.3O.sub.4, 0.03-0.10 parts by mass of Zr calculated as ZrO.sub.2, and 0-0.05 parts by mass of Ta calculated as Ta.sub.2O.sub.5, pre 100 parts by mass in total of the main components (calculated as the oxides), and having an average crystal grain size of 3 μm or more and less than 8 μm and a density of 4.65 g/cm.sup.3 or more.