Patent classifications
C04B2235/606
Method and apparatus for pyrolyzing an electrode
An electrode heat treatment device and associated method for fabricating an electrode are described, and include forming a workpiece, including coating a current collector with a slurry. The workpiece is placed on a first spool, and the first spool including the workpiece is placed in a sealable chamber, wherein the sealable chamber includes the first spool, a heat exchange work space, and a second spool. An inert environment is created in the sealable chamber. The workpiece is subjected to a multi-step continuous heat treatment operation in the inert environment, wherein the multi-step continuous heat treatment operation includes continuously transferring the workpiece through the heat exchange work space between the first spool and the second spool and controlling the heat exchange work space to an elevated temperature.
Honeycomb filter
A honeycomb filter includes a honeycomb structure having a porous partition wall disposed to surround a plurality of cells; and a plugging portion provided at one end of the cell, wherein the honeycomb structure has an inflow side region including a range of up to at least 30% with respect to the total length of the honeycomb structure with the inflow end face as the starting point and an outflow side region including a range of up to at least 20% with respect to the total length of the honeycomb structure with the outflow end face as the starting point, in the extending direction of the cell of the honeycomb structure, an average pore diameter of the partition wall in the inflow side region is 9 to 14 μm and an average pore diameter of the partition wall in the outflow side region is 15 to 20 μm.
ARMOR PLATING MADE OF FINE-GRAIN BORON CARBIDE AND SILICON CARBIDE
An antiballistic armor-plating component, includes a ceramic body made of a material comprising, as percentages by volume, between 35% and 55% of silicon carbide, between 20% and 50% of boron carbide, between 15% and 35% of a metallic silicon phase or of a metallic phase including silicon.
PRODUCTION METHOD OF TRANSPARENT POLYCRISTALLINE SILICON NITRIDE CERAMICS WITH SPARK PLASMA SINTERING TECHNIQUE
Invention relates to the production method of transparent polycrystalline silicon nitride ceramics which are obtained by sintering raw materials in powder form with powder metallurgy in the field of advanced technical ceramics and are used in the aviation and defense industry. More specifically, the present invention relates to a transparent polycrystalline silicon nitride ceramic material production method which allows obtaining transparent polycrystalline silicon nitride ceramic material at lower temperature and pressure values compared to the prior art in order to reduce production costs, facilitate the production process and reduce quantity/number of material and devices used, for this, unlike conventional sintering technique, spark plasma sintering technique in which heat is produced under high electrical current is used.
Antimicrobial Ceramic Tile and Manufacturing Method Thereof
The present invention provides an antimicrobial ceramic tile and manufacturing method thereof. A manufacturing method of an antimicrobial ceramic tile comprises: grinding soils into slurries; drying the slurries into powders by hot air; pressing the powders into a green body through a molding machine; dotting or spraying or showering a glaze slurry on the surface of the green body to form an engobe; dotting the glaze slurry on the engobe to form a ground glaze; mixing a surface glaze and an antimicrobial material into an antimicrobial glaze in a weight ratio of 100:5˜10; grinding water and the antimicrobial glaze into the antimicrobial glaze in a weight ratio of 5˜6:4˜5; and dotting antimicrobial glaze on the ground glaze; finally, rapidly firing the ceramic tile and the antimicrobial glaze into an antimicrobial ceramic tile.
DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT
Provided is a dielectric composition containing: a main component expressed by {Ba.sub.xSr.sub.(1-x)}.sub.mTa.sub.4O.sub.12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO.sub.2, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.
PREPREG FOR CERAMIC MATRIX COMPOSITE
A prepreg including a support with, for more than 90% of the weight thereof, of ceramic fibers, and a thermoreversible liquefiable gel covering, at least in part, at least one portion of the ceramic fibers. The liquefiable gel including: 20% to 60% of ceramic particles and 0% to 10% of metal particles, both as percentage by volume based on the volume of the liquefiable gel; 0.2% to 10% of a thermoreversible hydrocolloid and 0% to 7% of one or more other constituents, both as a percentage by weight on the basis of the total weight of the ceramic particles and metal particles; the balance to 100% being water. It being possible for the ceramic particles and the metal particles to be replaced, partially or completely, by precursors of ceramic particles and of metal particles, respectively, capable of forming, by heat treatment above 200° C., ceramic particles and metal particles, respectively.
HIGH GREEN DENSITY CERAMICS FOR BATTERY
Set forth herein are processes and materials for making ceramic thin green tapes by casting ceramic source powders and precursor reactants, binders, and functional additives into unsintered thin green tapes in a non-reactive environment.
Sintered zircon beads
A sintered bead with the following crystal phases, in percentages by mass based on crystal phases: 25%≤zircon, or “Z.sub.1”, ≤94%; 4%≤stabilized zirconia+stabilized hafnia, or “Z.sub.2”, ≤61%; monoclinic zirconia+monoclinic hafnia, or “Z.sub.3”≤50%; corundum≤57%; crystal phases other than Z.sub.1, Z.sub.2, Z.sub.3 and corundum<10%; the following chemical composition, in percentages by mass based on oxides: 33%≤ZrO.sub.2+HfO.sub.2, or “Z.sub.4”≤83.4%; HfO.sub.2≤2%; 10.6%≤SiO.sub.2≤34.7%; Al.sub.2O.sub.3≤50%; 0%≤Y.sub.2O.sub.3, or “Z.sub.5”; 0%≤CeO.sub.2, or “Z.sub.6”; 0.3%≤CeO.sub.2+Y.sub.2O.sub.3≤19%, provided that (1) CeO.sub.2+3.76*Y.sub.2O.sub.3≥0.128*Z, and (2) CeO.sub.2+1.3*Y.sub.2O.sub.3≤0.318*Z, with Z=Z.sub.4+Z.sub.5+Z.sub.6−(0.67*Z.sub.1*(Z.sub.4+Z.sub.5+Z.sub.6)/(0.67*Z.sub.1+Z.sub.2+Z.sub.3)); MgO≤5%; CaO≤2%; oxides other than ZrO.sub.2, HfO.sub.2, SiO.sub.2, Al.sub.2O.sub.3, MgO, CaO, CeO.sub.2 and Y.sub.2O.sub.3<5.0%.
Armour plate
Antiballistic armour plate includes a ceramic body including a hard material, provided, on its inner face, with a back energy-dissipating coating. The ceramic body is monolithic. The constituent material of the ceramic body includes grains of ceramic material having a Vickers hardness that is higher than 15 GPa, and a matrix binding the grains, the matrix including a silicon nitride phase and/or a silicon oxynitride phase, the matrix representing between 5 and 40% by weight of the constituent material of the ceramic body. The maximum equivalent diameter of the grains of ceramic material is smaller than or equal to 800 micrometres. The constituent material of the ceramic body has an open porosity that is higher than 5% and lower than 14%. The metallic silicon content in the material, expressed per mm of thickness of the body, is lower than 0.5% by weight.