A cBN sinter comprising cubic boron nitride grains and a binder phase, the binder phase comprising Ti.sub.2CN and TiAl.sub.3, wherein the ratio I.sub.Ti2CN/I.sub.TiAl3 of the peak intensity I.sub.Ti2CN of Ti.sub.2CN appearing at 2θ=41.9° to 42.2° to the peak intensity I.sub.TiAl3 of TiAl.sub.3 appearing at 2θ=39.0° to 39.3° is in a range of 2.0 to 30.0 in an XRD measurement.

A composite polycrystal contains polycrystalline diamond formed of diamond grains that are directly bonded mutually, and non-diamond carbon dispersed in the polycrystalline diamond, and has a concentration of contained hydrogen of greater than 1000 ppm and less than or equal to 20000 ppm.

A low-temperature, high stability co-fired microwave dielectric composite of ceramic and glass, including 85-99 wt % microwave dielectric ceramic of formula [1-y-z[(1−x)Mg.sub.2SiO.sub.4−xCa.sub.2SiO.sub.4]−yCaTiO.sub.3−zCaZrO.sub.3, wherein 0.2≦x≦0.7,0.05≦y≦0.3 and 0.02≦z≦0.15], and 1 to 15 wt % with Li.sub.2O—BaO—SrO—CaO—B.sub.2O.sub.3—SiO.sub.2 glass respectively made at a low sintering temperature of ceramic for co-firing with Ag or Cu electrode, employing eutectic phase of ceramic oxides to reduce its melting temperature, a low melting-point glass material with high chemical stability as a sintering aid added to oxides and raw material powders of Li.sub.2O, BaO, SrO, CaO, B.sub.2O.sub.3 and SiO.sub.2, obtained by combining and melting the ingredients in the temperature range between 1000 to 1300° C., quenching and crashing, and then adding it to the main ceramic oxides to form the final composition. This ceramic/glass composite material may be co-fired with an Ag and Cu electrode at 900° C.-970° C. for 0.5-4 hours in a protective atmosphere. After sintering, this dielectric material possesses efficacious microwave dielectric properties, dielectric constant between middle-K to low-K at 8.sup.−15, high quality factors, low dielectric loss, low temperature-capacitance coefficient and superior chemical stability suitable for manufacture of multilayer ceramic devices.

Methods of forming solid carbon products include disposing a plurality of nanotubes in a press, and applying heat to the plurality of carbon nanotubes to form the solid carbon product. Further processing may include sintering the solid carbon product to form a plurality of covalently bonded carbon nanotubes. The solid carbon product includes a plurality of voids between the carbon nanotubes having a median minimum dimension of less than about 100 nm. Some methods include compressing a material comprising carbon nanotubes, heating the compressed material in a non-reactive environment to form covalent bonds between adjacent carbon nanotubes to form a sintered solid carbon product, and cooling the sintered solid carbon product to a temperature at which carbon of the carbon nanotubes do not oxidize prior to removing the resulting solid carbon product for further processing, shipping, or use.

A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a Y.sub.2O.sub.3—ZrO.sub.2 powder consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of Y.sub.2O.sub.3—ZrO.sub.2, the sintered ceramic body consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2.

diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB.sub.6) powder to obtain a precursor powder; and (S2) subjecting the precursor powder to pressureless sintering to obtain the high-entropy carbide-high-entropy diboride-SiC multiphase ceramic with a relative density of 96% or more.

A low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 μm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a B.sub.4C sintering aid, or with a sintering aid comprising Al.sub.2O.sub.3 and Y.sub.2O.sub.3 with total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.

The invention provides a lighting device comprising a plurality of solid state light sources and an elongated ceramic body having a first face and a second face defining a length (L) of the elongated ceramic body, the elongated ceramic body comprising one or more radiation input faces and a radiation exit window, wherein the second face comprises the radiation exit window, wherein the plurality of solid state light sources are configured to provide blue light source light to the one or more radiation input faces and are configured to provide to at least one of the radiation input faces a photon flux of at least 1.0*10.sup.17 photons/(s.Math.mm.sup.2), wherein the elongated ceramic body comprises a ceramic material configured to wavelength convert at least part of the blue light source light into at least converter light, wherein the ceramic material comprises an A.sub.3B.sub.5O.sub.12:Ce.sup.3+ ceramic material, wherein A comprises one or more of yttrium (Y), gadolinium (Gd) and lutetium (Lu), and wherein B comprises aluminum (Al).

Disclosed is a ceramic sintered shaped body containing Y.sub.2O.sub.3-stabilized zirconia with a sintered density of at least 99% of the theoretical sintered density and having a mean grain size of <180 nm. The zirconia fraction of the sintered shaped body comprises tetragonal and cubic phases. Also disclosed is a process for the production of a ceramic sintered shaped body containing Y.sub.2O.sub.3-stabilized zirconia, which process comprises dispersion of a submicron powder and comminution of the dispersed submicron powder by means of grinding media having a diameter of less than or equal to 100 μm to a particle size d.sub.95 of <0.42 μm; shaping of the dispersion to form a body, and sintering of the body to form the sintered shaped body.

A sintered material is provided having a phase of a compound at least containing a rare earth element and fluorine, the sintered material having an L* value of 70 or more in the L*a*b* color space. The crystal grains of the sintered material preferably has an average grain size of 10 μm or less. The sintered material preferably has a relative density of 95% or more. The sintered material preferably has a three-point flexural strength of 100 MPa or more. The sintered material preferably contains no oxygen, or preferably has an oxygen content of 13% by mass or less when containing oxygen. The compound is preferably rare earth element fluoride or oxyfluoride.