In a ceramic/copper/graphene assembly, a ceramic member, a copper member formed of copper or a copper alloy, and a graphene-containing carbonaceous member containing a graphene aggregate are joined. At a joining interface between the copper member and the graphene-containing carbonaceous member, an active metal carbide layer containing a carbide of one or more kinds of active metals selected from Ti, Zr, Nb, and Hf is formed on a side of the graphene-containing carbonaceous member, and a Mg solid solution layer having Mg dissolved in a matrix phase of Cu is formed between the active metal carbide layer and the copper member.

The invention relates to a method for producing a metal-ceramic substrate and to a furnace suitable for carrying out the method. With the method, a metal-ceramic substrate with increased thermal and current conductivity can be obtained. The method comprises the steps of providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, the solder material comprising a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal, and heating the stack, the stack passing through a heating zone for heating.

The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.

A sintered body includes a solid solution containing cobalt and iron, with the balance being zirconia. The total content of cobalt in terms of CoO and iron in terms of Fe.sub.2O.sub.3 is more than 0.1 wt % and less than 3.0 wt %, and the proportion of cobalt regions larger than 5.5 μm.sup.2 in an elemental map obtained using an electron probe microanalyzer is 25% or less.

The present invention is directed to a method for producing a silicon nitride sintered material, the method including heating a molded article, which contains a silicon nitride powder having a β phase ratio of 80% or more, a dissolved oxygen content of 0.2% by mass or less, and a specific surface area of 5 to 20 m.sup.2/g, and a sintering auxiliary containing a compound having no oxygen bond, and which has an overall oxygen content controlled to be 1 to 15% by mass and an aluminum element overall content controlled to be 800 ppm or less, to a temperature of 1,200 to 1,800° C. in an inert gas atmosphere under a pressure of 0 MPa.Math.G or more and less than 0.1 MPa.Math.G to sinter the silicon nitride.

In the present invention, there can be provided a method for producing a silicon nitride sintered material, which method is advantageous in that a silicon nitride sintered material having high thermal conductivity can be obtained even when using a silicon nitride powder having a high β phase ratio and conducting calcination under normal pressure or substantially normal pressure.

A method of making abrasive particles includes: providing a slurry comprising non-colloidal solid particles and a liquid vehicle; forming at least a portion of the slurry into shaped bodies contacting a substrate; at least partially drying the shaped bodies to provide shaped abrasive precursor particles; separating at least a portion of the shaped abrasive precursor particles from the substrate; and converting at least a portion of the shaped abrasive precursor particles into shaped abrasive particles. The shaped abrasive particles comprise alpha alumina having an average crystal grain size of 0.8 to 8 microns and an apparent density that is at least 92 percent of the true density. Each shaped abrasive particle has a respective surface comprising a plurality of smooth sides that form at least four vertexes. Shaped abrasive particles, abrasive articles including them, and methods of using are also disclosed.

The present invention relates to a SiC composite and a method for manufacturing the same. More particularly, the present invention relates to a slurry composition for ceramic matrix composites which can not only reduce the number of precursor impregnation pyrolysis (PIP) cycles but also be useful in the PIP process to increase hardness, thermal stability, and relative density.

The present invention relates to a conductive porous ceramic substrate and a method of manufacturing the same, and more particularly to a conductive porous ceramic substrate, in which a porous ceramic substrate used as a chuck or stage for fixing a thin semiconductor wafer substrate or display substrate through vacuum adsorption is imparted with antistatic performance so as to prevent the generation of static electricity, and a method of manufacturing the same.

A method for producing a zirconia sintered body includes: heating a zirconia molded body or a zirconia pre-sintered body, the heating includes a temperature increasing step, and a rate of temperature increase in a temperature region from a temperature at which the zirconia starts to shrink to a temperature at which the zirconia finishes shrinking in the temperature increasing step is adjusted to enable the zirconia molded body or the zirconia pre-sintered body to shrink at substantially a constant rate during temperature increase in each of zones of when the temperature region is evenly divided into a plurality of zones of specific temperature ranges.

A zirconia powder containing a stabilizer, and having a specific surface area of 20 m.sup.2/g or more and 60 m.sup.2/g or less and a particle diameter D.sub.50 of 0.1 μm or more and 0.7 μm or less, in which in a range of 10 nm or more and 200 nm or less in a pore distribution based on a mercury intrusion method, a peak top diameter in a pore volume distribution is 20 nm or more and 85 nm or less, a pore volume is 0.2 ml/g or more and less than 0.5 ml/g, and a pore distribution width is 40 nm or more and 105 nm or less.