Provided is a boron nitride sintered body including boron nitride particles and pores, in which an average pore diameter of the pores is less than 2 μm. Provided is a method for manufacturing a boron nitride sintered body, the method including: a nitriding step of firing a boron carbide powder in a nitrogen pressurized atmosphere to obtain a fired product containing boron carbonitride; and a sintering step of molding and heating a blend containing the fired product and a sintering aid to obtain the boron nitride sintered body including boron nitride particles and pores, in which the sintering aid contains boron oxide and calcium carbonate, and the blend contains 1 to 20 parts by mass of a boron compound and a calcium compound in total with respect to 100 parts by mass of the fired product.

Provided is a boron nitride sintered body including boron nitride particles and pores, in which a compressive elastic modulus is 1 GPa or more. Provided is a method for manufacturing a boron nitride sintered body, the method including: a nitriding step of firing a boron carbide powder in a nitrogen atmosphere to obtain a fired product containing boron carbonitride; and a sintering step of molding and heating a blend containing the fired product and a sintering aid to obtain the boron nitride sintered body including boron nitride particles and pores, in which the sintering aid contains a boron compound and a calcium compound, and the blend contains 1 to 20 parts by mass of the boron compound and the calcium compound in total with respect to 100 parts by mass of the fired product.

Described herein are embodiments directed to additive manufacturing (AM), including three-dimensional (3D) printing, of metal nitride ceramics. In some embodiments herein, AM may comprise powder bed fusion (PBF) techniques. Also described herein are metal nitride ceramic components formed by AM techniques and methods for forming metal nitrides capable of being used in AM processes.

This document describes processes for preparing ceramics, especially lithium-based ceramics. The ceramics produced by this process and their use in electrochemical applications are also described as well as electrode materials, electrodes, electrolyte compositions, and electrochemical cells comprising them.

Provided is a boron nitride sintered body having a porous structure, the boron nitride sintered body including a lump particle formed by aggregation of primary particles of boron nitride and having a particle diameter of 15 μm or more. Provided is a method for manufacturing a boron nitride sintered body, the method including: a nitriding step of firing a raw material powder containing boron carbide in an atmosphere containing nitrogen to obtain a fired product including lump particles each having a core part with primary particles of boron carbonitride aggregated and a shell part surrounding the core part; and a firing step of molding and heating a blend containing the fired product including lump particles and a sintering aid to obtain the boron nitride sintered body having a porous structure and including lump particles of boron nitride.

A Li ion conductor having a composition different from a conventional composition is provided. The Li ion conductor contains at least one selected from a group Q consisting of Ga, V, and Al, Li, La and O. A part of an Li site is optionally substituted with a metal element D, a part of an La site is optionally substituted with a metal element E, and parts of Ga, V and Al sites are optionally substituted with a metal element J. A mole ratio of an amount of Li to a total amount of La, the element E, Ga, V, Al, and the element J is not lower than 8.1/5 and not higher than 9.5/5. A mole ratio of a total amount of Ga, V, and Al to a total amount of La and the element E is not lower than 1.1/3 and not higher than 2/3.

An additive manufacturing (AM) system includes a housing defining a chamber, a build platform disposed in the chamber at a first elevation, and a lower gas inlet disposed at a second elevation and configured to supply a lower gas flow. The AM system includes a contoured surface extending between the lower gas inlet and the build platform to direct the lower gas flow from the second elevation at the lower gas inlet to the first elevation at the build platform, where the contoured surface discharges the lower gas flow in a direction substantially parallel to the build platform. The AM system also includes one or more gas delivery devices coupled to the lower gas inlet to regulate one or more flow characteristics of the lower gas flow, and a gas outlet configured to discharge the lower gas flow.

A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

Provided is a crystalline silicon carbide fiber containing silicon carbide, boron nitride, and zirconium carbide and having a content of Si of 64% by weight or more and a content of C of 28% by weight or more, in which the average particle size of SiC crystal grains is 100 nm or more.

The present invention relates to a process for sintering a compacted powder of at least one oxide of a metal selected from an actinide and a lanthanide, this process comprising the following successive steps, carried out in a furnace and under an atmosphere comprising an inert gas, dihydrogen and water: (a) a temperature increase from an initial temperature T.sub.I up to a hold temperature T.sub.P, (b) maintaining the temperature at the hold temperature T.sub.P, and (c) a temperature decrease from the hold temperature T.sub.P down to a final temperature T.sub.F, in which the P(H.sub.2)/P(H.sub.2O) ratio is such that: 500<P(H.sub.2)/P(H.sub.2O)≦50 000, during step (a), from T.sub.I until a first intermediate temperature T.sub.i1 between 1000° C. and T.sub.P is reached, and P(H.sub.2)/P(H.sub.2O)≦500, at least during step (c), from a second intermediate temperature T.sub.i2 between T.sub.P and 1000° C., until T.sub.F is reached.