C04B2235/658

Transparent spinel sintered body, optical member and method for producing transparent spinel sintered body
11673838 · 2023-06-13 · ·

Provided is a transparent spinel sintered body which is formed from an Mg—Al spinel powder having an Al/Mg ratio of from 1.97 to 2.03 or a mixed powder of an Mg oxide and an Al oxide, and wherein the total content of metal impurities excluding Al and Mg is less than 100 ppm. A sample of this transparent spinel sintered body having a thickness of 3 mm has a total light transmittance of 80% or more in the thickness direction for the wavelength range of from 190 nm to 400 nm; and this transparent spinel sintered body is usable as a medium that transmits light from an ultraviolet light emitting element.

GLASS-CERAMIC-FERRITE COMPOSITION AND ELECTRONIC COMPONENT
20170345543 · 2017-11-30 · ·

A glass-ceramic-ferrite composition containing a glass, a ferrite, and a ceramic filler, in which the glass contains, by weight, about 0.5% to about 5.0% R.sub.2O (R represents at least one selected from the group consisting of Li, Na, and K), about 5.0% or less Al.sub.2O.sub.3, about 10.0% to about 25.0% B.sub.2O.sub.3, and about 70.0% to 85.0% SiO.sub.2 with respect to the total weight of the glass, the percentage by weight of the ferrite is about 10% to 80% with respect to the total weight of the composition, the ceramic filler contains at least forsterite selected from forsterite and quartz, the percentage by weight of the forsterite is about 1% to about 10% with respect to the total weight of the composition, and the percentage by weight of the quartz is about 40% or less with respect to the total weight of the composition.

Honeycomb structure
11673131 · 2023-06-13 · ·

A honeycomb structure, including: a plurality of pillar shaped honeycomb segments, each of the pillar shaped honeycomb segments including a partition wall and a plugged portion; and a joining layer arranged so as to join side surfaces of the pillar shaped honeycomb segments to each other. The honeycomb structure satisfies the following equations (1) to (3):
y≤1000  (1);
y≤717.92x.sup.−0.095  (2); and
y≥462.4x.sup.−0.153  (3),
in which y is a maximum temperature (° C.) at which the use of the honeycomb structure is accepted, and x is a thermal conduction factor represented by the following equation:
thermal conduction factor=(thermal conductivity of the partition wall×thermal conductivity of the joining layer)/(average thickness of the joining layer×porosity of the partition wall).

LITHIUM-ION CONDUCTIVE CERAMIC MATERIAL AND PROCESS
20230178795 · 2023-06-08 ·

A method of preparing a lithium lanthanum zirconate (LLZO) cubic garnet material is provided which comprises the following steps: (a) milling a slurry comprising one or more precursor compounds in an aqueous medium, wherein the one or more precursor compounds comprise lithium, lanthanum, zirconium and optionally one or more dopant elements, to provide a milled slurry; (b) spray drying the milled slurry to provide a spray-dried powder; and (c) annealing the spray-dried powder. The resultant LLZO cubic garnet material may be used as a lithium ion conductive solid electrolyte in secondary lithium-ion batteries.

SOLID CARBON PRODUCTS COMPRISING CARBON NANOTUBES AND METHODS OF FORMING SAME
20170334725 · 2017-11-23 · ·

Methods of forming solid carbon products include disposing a plurality of nanotubes in a press, and applying heat to the plurality of carbon nanotubes to form the solid carbon product. Further processing may include sintering the solid carbon product to form a plurality of covalently bonded carbon nanotubes. The solid carbon product includes a plurality of voids between the carbon nanotubes having a median minimum dimension of less than about 100 nm. Some methods include compressing a material comprising carbon nanotubes, heating the compressed material in a non-reactive environment to form covalent bonds between adjacent carbon nanotubes to form a sintered solid carbon product, and cooling the sintered solid carbon product to a temperature at which carbon of the carbon nanotubes do not oxidize prior to removing the resulting solid carbon product for further processing, shipping, or use.

Silicon carbide member for plasma processing apparatus, and production method therefor

A low-cost, durable silicon carbide member for a plasma processing apparatus. The silicon carbide member for a plasma processing apparatus can be obtained by processing a sintered body which is produced with a method in which metal impurity is reduced to more than 20 ppm and 70 ppm or less, and an α-structure silicon carbide power having an average particle diameter of 0.3 to 3 μm and including 50 ppm or less of an Al impurity is mixed with 0.5 to 5 weight parts of a B.sub.4C sintering aid, or with a sintering aid comprising Al.sub.2O.sub.3 and Y.sub.2O.sub.3 with total amount of 3 to 15 weight parts, and then a mixture of the α-structure silicon carbide power with the sintering aid is sintered in an argon atmosphere furnace or a high-frequency induction heating furnace.

ADDITIVELY MANUFACTURED HIGH TEMPERATURE OBJECTS
20170313050 · 2017-11-02 ·

Method for producing an object by additively manufacturing a preform of the object from a building material comprising a polymer. The preform is encapsulated with a metal or metal alloy encapsulant that is capable of withstanding temperatures greater than the preform. The encapsulated preform is heated at a predetermined temperature and for a period of time, such that the preform at least partially transmutes into the form of a carbonaceous solid.

Systems and methods for enabling communication between USB type-C connections and legacy connections over an extension medium

Techniques for supporting USB and video communication over an extension medium are provided. In some embodiments, an upstream facing port device (UFP device) is coupled to legacy connectors of a host device, and a downstream facing port device (DFP device) is coupled to a USB Type-C receptacle of the sink device that may provide both USB and DisplayPort information. The UFP device and DFP device communicate to properly configure the USB Type-C connection for use in the extension environment. In some embodiments, a source device is coupled to the UFP device via a USB Type-C connection, and legacy video and USB devices are coupled to the DFP device. The UFP device and DFP device again communicate to cause the source device to properly configure the USB Type-C connection for use in the extension environment.

FRICTION STIR WELDING TOOL MEMBER MADE OF SILICON NITRIDE SINTERED BODY AND FRICTION STIR WELDING APPARATUS USING SAME

The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. It is preferable that the content of the additive component is 3% by mass or more and 12.5% by mass or less. It is also preferable that the additive component includes four or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. Due to above structure, there can be provided a welding tool member for friction stir welding having a high durability.

Material for storing and releasing oxygen
11666884 · 2023-06-06 ·

The invention relates to a material for storing and releasing oxygen, consisting of a reactive ceramic made of copper, manganese and iron oxides, wherein, subject to the oxygen partial pressure of a surrounding atmosphere and/or an ambient temperature, the reactive ceramic has a transition region that can be passed through any number of times, said transition region being between a discharge threshold state of a three-phase crednerite/cuprite/hausmannite mixed ceramic and a charge threshold state of a two-phase spinel/tenorite mixed ceramic. A passing through of the transition region from the discharge threshold state towards the charging threshold state is associated with oxygen uptake and a passing through of the transition region from the charge threshold state towards the discharge threshold state is associated with oxygen release.