Patent classifications
C04B2235/72
MOLYBDENUM OXYCHLORIDE WITH IMPROVED BULK DENSITY
Molybdenum oxychloride consolidated masses, comprising molybdenum oxychloride and less than 10 wt % binder. The consolidated masses have a bulk density greater than 0.85 g/cc.
COPPER/CERAMIC JOINED BODY AND INSULATING CIRCUIT SUBSTRATE
A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.
LIQUID CONTACT MEMBER, METHOD FOR PRODUCING SAME, MEMBER FOR ANALYZERS, ANALYZER, SLIDING MEMBER, AND SLIDING DEVICE
Object
To provide a liquid contact member having high hydrophilicity and exhibiting high dirt removal efficiency by cleaning.
Solution
A liquid contact member includes a ceramic including a plurality of crystal grains and a grain boundary phase, and the concentration of silicon on a liquid contact surface of the ceramic is higher than that of silicon on a virtual internal surface parallel to the liquid contact surface.
Shaped abrasive particles, methods of making, and abrasive articles including the same
A method of making abrasive particles includes: providing a slurry comprising non-colloidal solid particles and a liquid vehicle; forming at least a portion of the slurry into shaped bodies contacting a substrate; at least partially drying the shaped bodies to provide shaped abrasive precursor particles; separating at least a portion of the shaped abrasive precursor particles from the substrate; and converting at least a portion of the shaped abrasive precursor particles into shaped abrasive particles. The shaped abrasive particles comprise alpha alumina having an average crystal grain size of 0.8 to 8 microns and an apparent density that is at least 92 percent of the true density. Each shaped abrasive particle has a respective surface comprising a plurality of smooth sides that form at least four vertexes. Shaped abrasive particles, abrasive articles including them, and methods of using are also disclosed.
Ferrite sintered magnet and rotary electrical machine comprising the same
A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 μm per cross-sectional area of 76 μm.sup.2 is N, N is 7 or less.
BACKFILL FOR PRODUCING A BASIC HEAVY-CLAY REFRACTORY PRODUCT, SUCH A PRODUCT AND METHOD FOR PRODUCING SAME, LINING OF AN INDUSTRIAL FURNACE, AND INDUSTRIAL FURNACE
A dry backfill for producing a basic molded heavy-clay refractory product, to such a product and a method for producing the same, to a lining of an industrial furnace, and to an industrial furnace.
PLASMA RESISTANT YTTRIUM ALUMINUM OXIDE BODY
Disclosed herein is a sintered ceramic body comprising from 90% to 99.9% by volume of polycrystalline yttrium aluminum garnet (YAG) as measured using XRD and image processing methods and a volumetric porosity of from 0.1 to 4% as calculated from density measurements performed in accordance with ASTM B962-17. The sintered ceramic body may have a total purity of 99.99% and greater and a grain size of from 0.3 to 8 μm. A method of making the sintered ceramic body is also disclosed.
COLD SINTERING PROCESS OF USING SODIUM BETA ALUMINA
Embodiments relate to a method for fabricating a sintered sodium-ion material. The method involves mixing a parent phase sodium-ion compound with a secondary transient phase to form a powder mixture. The method involves applying pressure and heat above a melting point or boiling point of the secondary transient phase to drive dissolution at particle contacts and subsequent precipitation at newly formed grain boundaries. The method involves generating a sintered sodium-ion material with >90% relative density.
Sintered polycrystalline cubic boron nitride material
Polycrystalline cubic boron nitride, PCBN, material and methods of making PCBN. A method includes providing a matrix precursor powder comprising particles having an average particle size no greater than 250 nm, providing a cubic boron nitride, cBN, powder comprising particles of cBN having an average particle size of at least 0.2 intimately mixing the matrix precursor powder and the cBN powder, and sintering the intimately mixed powders at a temperature of at least 1100° C. and a pressure of at least 3.5 GPa to form the PCBN material comprising particles of cubic boron nitride, cBN dispersed in a matrix material.
Plasma processing device member and plasma processing device provided with same
A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.