A cubic boron nitride sintered material tool contains a plurality of cBN grains. cBN grains located on a surface of the cutting edge contain a cubic boron nitride phase, and a hexagonal boron nitride phase. When a ratio I.sub.π*/I.sub.σ* between an intensity of a π* peak derived from a π bond of hBN in the hexagonal boron nitride phase and an intensity of a σ* peak derived from a σ bond of hBN in the hexagonal boron nitride phase and a σ bond of cBN in the cubic boron nitride phase is determined by measuring an energy loss associated with excitation of K-shell electrons of boron, the ratio I.sub.π*/I.sub.σ* of the cBN grain on the surface of the cutting edge is 0.1 to 2, and the ratio I.sub.π*/I.sub.σ* of the cBN grain at a depth position of 5 μm from the surface of the cutting edge is 0.001 to 0.1.

A pore-free ceramic is provided that has a high modulus of elasticity and a low coefficient of thermal expansion. A process for producing a corresponding ceramic is also provided. The pore free ceramic is a dimensionally stable substrate material in applications subjected to temperature gradients including semiconductor manufacture.

Disclosed are embodiments of high Q modified materials. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

The present invention relates to a method for preparing a SiC—Si.sub.3N.sub.4 composite material and a SiC—Si.sub.3N.sub.4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si.sub.3N.sub.4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si.sub.3N.sub.4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si.sub.3N.sub.4, which is a material with a high thermal shock strength, to grow together via a CVD method.

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

A lanthanum molybdenum composite oxide is provided. The lanthanum molybdenum composite oxide has a primary crystal phase formed of La.sub.2Mo.sub.2O.sub.9. The lanthanum molybdenum composite oxide also has a secondary crystal phase formed of a lanthanum molybdenum composite oxide species other than La.sub.2Mo.sub.2O.sub.9. The secondary crystal phase may contain at least one species selected from a group consisting of La.sub.2Mo.sub.3O.sub.12, La.sub.6MoO.sub.12, La.sub.7Mo.sub.7O.sub.30, La.sub.2Mo.sub.4O.sub.15, La.sub.2MoO.sub.6, La.sub.4MoO.sub.9, and LaMo.sub.2O.sub.5.

A refractory object may include a zircon body that is intentionally doped with a dopant including an alkaline earth element and aluminum. The refractory object can have an improved creep deformation rate. In an embodiment, the refractory object can have a creep deformation rate of not greater than about 1.8 E-5 h.sup.−1 at a temperature of 1350° C. and a stress of 2 MPa. In another embodiment, the zircon body may include an amorphous phase including an alkaline earth metal element.

A piezoelectric material composition, a method of manufacturing the same, a piezoelectric device, and apparatus including the piezoelectric device. The piezoelectric device may include a piezoelectric device layer including a first material and a second material surrounded by the first material, a first electrode portion disposed at a first surface of the piezoelectric device layer, and a second electrode portion disposed at a second surface of the piezoelectric device layer opposite to the first surface, wherein the piezoelectric device layer comprises a piezoelectric material composition represented by Chemical Formula 1: 0.96(Na.sub.aK.sub.1-a)(Nb.sub.b(T.sub.1-b))O.sub.3-(0.04-x)MZrO.sub.3-x(Bi.sub.cAg.sub.1-c)ZrO.sub.3+d mol % NaNbO.sub.3, wherein T is Sb or Ta, M is Sr, Ba or Ca, a is 0.4≤a≤0.6, b is 0.90≤b≤0.98, c is 0.4≤c≤0.6, d is 0≤d≤5.0, and x is 0≤x≤0.04 and wherein T is Sb or Ta and M is Sr, Ba, or Ca.