The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A SiC powder containing 70% by mass or more of a β-SiC, wherein in a volume-based cumulative particle size distribution measured by a laser diffraction method, a D50 is 8 to 35 μm and a D10 is 5 μm or more.

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.

A ceramic contains, in mass percent: Si.sub.3N.sub.4: 20.0 to 60.0%, ZrO.sub.2: 25.0 to 70.0%, and one or more oxides selected from MgO, Y.sub.2O.sub.3, CeO.sub.2, CaO, HfO.sub.2, TiO.sub.2, Al.sub.2O.sub.3, SiO.sub.2, MoO.sub.3, CrO, CoO, ZnO, Ga.sub.2O.sub.3, Ta.sub.2O.sub.5, NiO, and V.sub.2O.sub.5: 5.0 to 15.0%. The ceramic has a coefficient of thermal expansion as high as that of silicon and an excellent mechanical strength, allows fine machining with high precision, and prevents particles from being produced.

Described herein are new solid oxide fuel cell interconnects and methods for making same that may comprise a novel bilayer construct on an anode substrate to provide a dense microstructure, low area specific resistance, and negligible oxygen permeability to form a bilayer ceramic interconnect that is a strong candidate for next-generation, durable, and low-cost tubular solid oxide fuel cells.

The invention relates to a method for utilizing mineral materials for additive manufacturing that can be implemented more quickly, more economically and with greater technical simplicity, in comparison with common additive manufacturing, by virtue of controlled expansion in the sintering process by means of a laser source. The entire production process is free of organic materials and allows previously unfeasible end uses in the fields of acoustic insulation, thermal insulation, fire protection, filtration, design objects and lightweight components to be realized. In particular, the invention relates to a method for producing a product by means of 3-D printing or additive manufacturing, wherein an open-pore lightweight part is constructed layer-by-layer, without the use of organic binders or other organic auxiliary agents, from a pulverous mineral starting raw substance of natural origin, which raw substance is obtained without chemical alteration of the solid constituents of the natural material, and wherein, beginning with the second layer, the most recently applied layer is bonded to the surface of the existing body of the lightweight part by means of immediately subsequently performed direct selective laser sintering.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

Provided is a method for producing a wavelength conversion sintered body that emits light under irradiation of excitation light. The method for producing a wavelength conversion sintered body includes: preparing a molded body obtained by molding a mixture containing an α-SiAlON fluorescent material and aluminum oxide particles and having a content of Ga of 15 ppm by mass or less; and primary calcining the molded body at a temperature in a range of 1,370° C. or more and 1,600° C. or less to obtain a first sintered body.

Provided are a method for preparing a gel composite material with a piezoelectric property, and the gel composite material and use thereof, which belongs to the field of intelligent road traffic. In the method, titanium-containing blast furnace slag and metal oxides (PbO and ZrO.sub.2) are sufficiently and uniformly mixed, an obtained mixture is calcined under a certain thermal system, on the theoretical basis of mineral-phase reconstruction-synergistic regulation of all valuable components, and the mixture is cooled to a room temperature with a furnace to obtain the gel composite material with a piezoelectric property.

A ceramic powder material containing: a first garnet-type compound containing Li, La, and Zr; and a second garnet-type compound containing Li, La, and Zr and having a composition different from a composition of the first garnet-type compound, in which the first garnet-type compound and the second garnet-type compound are represented by Formula [1] Li.sub.7-(3x+y)M1.sub.xLa.sub.3Zr.sub.2-yM2.sub.yO.sub.12, where Ml is Al or Ga, M2 is Nb or Ta, the first garnet-type compound satisfies 0≤(3x+y)≤0.5, and the second garnet-type compound satisfies 0.5<(3x+y)≤1.5.