Patent classifications
C04B2235/96
DENTAL ITEM, POWDER FOR DENTAL ITEM AND METHOD FOR MANUFACTURING SUCH AN ITEM
A powder intended for the manufacture of a sintered dental article, The powder has a chemical analysis such that, as weight percentages based on the oxides: Al.sub.2O.sub.3: 0.2%, oxides other than ZrO.sub.2, HfO.sub.2, Yb.sub.2O.sub.3, Y.sub.2O.sub.3 and Al.sub.2O.sub.3: <0.5%, and ZrO.sub.2+HfO.sub.2+Yb.sub.2O.sub.3+Y.sub.2O.sub.3: balance to 100%, with HfO.sub.2<2%. The contents of Yb.sub.2O.sub.3 and Y.sub.2O.sub.3, as molar percentages based on the sum of ZrO.sub.2, HfO.sub.2, Yb.sub.2O.sub.3 and Y.sub.2O.sub.3, being such that Yb.sub.2O.sub.3≥1%, 0.5%≤Y.sub.2O.sub.3<2%, and Yb.sub.2O.sub.3+Y.sub.2O.sub.3≤5.5%. The powder has a specific surface area of greater than or equal to 5 m.sup.2/g and less than or equal to 16 m.sup.2/g. The powder has a median size of greater than or equal to 0.1 μm and less than or equal to 0.7 μm.
CERAMIC COMPONENT AND METHOD OF MANUFACTURING CERAMIC COMPONENT
The present disclosure relates to a ceramic component including a boron carbide, wherein a difference of a first residual stress measured at a first spot on a surface of the ceramic component and a second residual stress measured at a second spot on the surface having different distance from a center of the surface than the first spot is −600 to +600 MPa.
CERAMIC COMPONENT AND PLASMA ETCHING APPARATUS COMPRISING SAME
A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10.sup.−1 Ω.Math.cm to 20 Ω.Math.cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.
ZIRCONIA POWDER, ZIRCONIA SINTERED BODY, AND METHOD FOR PRODUCING ZIRCONIA SINTERED BODY
A zirconia powder in which when a stabilizer is Y.sub.2O.sub.3, a content thereof is 1.4 mol % or more and less than 2.0 mol %; when the stabilizer is Er.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; when the stabilizer is Yb.sub.2O.sub.3, a content thereof is 1.4 mol % or more and 1.8 mol % or less; and when the stabilizer is CaO, a content thereof is 3.5 mol % or more and 4.5 mol % or less; and in a range of 10 nm or more and 200 nm or less in a pore distribution, a peak top diameter of a pore volume distribution is 20 nm or more and 120 nm or less, a pore volume is 0.2 ml/g or more and less than 0.5 ml/g, and a pore distribution width is 30 nm or more and 170 nm or less.
Method of producing honeycomb structured body
The present invention provides a method of producing a honeycomb structured body having excellent mechanical strength. The present invention relates to a method of producing a honeycomb structured body including a honeycomb fired body in which multiple through-holes are arranged longitudinally in parallel with one another with a partition wall therebetween, the method including: a raw material mixing step of preparing a raw material paste containing ceria-zirconia composite oxide particles, alumina particles, an inorganic binder, and alumina fibers; a molding step of molding the raw material paste into a honeycomb molded body in which multiple through-holes are arranged longitudinally in parallel with one another with a partition wall therebetween; a drying step of drying the honeycomb molded body obtained in the molding step; and a firing step of firing the honeycomb molded body dried in the drying step into a honeycomb fired body, wherein the percentage of amorphous alumina fibers in the alumina fibers for use in the raw material mixing step is 50 to 100 wt %.
Silicon nitride substrate and silicon nitride circuit board
In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
POLYCRYSTALLINE CUBIC CRYSTAL BORON NITRIDE AND TOOL
A polycrystalline cubic boron nitride includes a cubic boron nitride particle group. The ratio of a second length to a first length is 0.99 or less. Here, each of the first length and the second length is a value measured on a surface of the polycrystalline cubic boron nitride with an indentation formed by a Knoop hardness test under conditions specified in ISO4545-1 and ISO4545-4. The second length represents the length of the longer diagonal of the indentation. The first length represents the sum of the second length and the length of the streaky indentation.
COPPER/CERAMIC ASSEMBLY AND INSULATED CIRCUIT BOARD
This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of aluminum-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, at a bonded interface between the copper member and the ceramic member, an active metal compound layer containing an active metal compound that is a compound of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and in the active metal compound layer Al and Cu are present at a grain boundary of the active metal compound.
SOLID ELECTROLYTE
A solid electrolyte which contains a garnet-type composite metal oxide phase (L) and shows an excellent lithium ion conductivity is provided. The solid electrolyte contains a garnet-type composite metal oxide phase (L) and a phase (D) different from the phase (L). The phase (L) contains Li, La, Zr, O, and Ga, and an Li site in the phase (L) is substituted with the Ga. A lattice constant of the solid electrolyte is not smaller than 12.96 Å. The phase (D) contains at least one of LiF, BaZrO.sub.3, YF.sub.3, SrF.sub.2, and ScF.sub.3.
Solid electrolyte, manufacturing method thereof, and gas sensor
A solid electrolyte includes partially stabilized zirconia in which a stabilizer forms a solid solution in zirconia. The partially stabilized zirconia includes at least monoclinic phase particles and cubic phase particles as crystal particles that configure the partially stabilized zirconia, and an abundance ratio of the monoclinic phase particle is 5 to 25% by volume. The partially stabilized zirconia includes stabilizer low-concentration phase particles of which concentration of the stabilizer at a particle center is equal to or less than 1 mol %, as the crystal particles. The stabilizer low-concentration phase particles have a particle-size distribution of number frequency thereof having a peak at which an average particle size is 0.6 to 1.0 μm, and a particle size at 10% of a cumulative number is 0.5 μm or greater, and of the overall low-concentration phase particles, 50% by volume or greater belong to the peak.