A seal system includes a ceramic component, a metallic component, a silicon-containing layer, and a barrier layer. The ceramic component has a first surface region that defines a first surface roughness. The metallic component is situated adjacent to the first surface region and has a second surface region facing the first surface region. The silicon-containing layer is on the first surface region of the ceramic component and has a contact surface that defines a second surface roughness which is less than the first surface roughness. The barrier layer is on the metallic component and in contact with the silicon-containing layer and serves to limit interaction between silicon of the silicon-containing layer and the metallic component. The barrier layer includes at least one of alumina or MCrAlY.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.

An electrochemical cell is described, including an anodic chamber and a cathodic chamber separated by an electrolyte separator tube, all contained within a cell case. The cell also includes an electrically insulating ceramic collar positioned at an opening of the cathodic chamber, and defining an aperture in communication with the opening; along with a cathode current collector assembly; and at least one metallic ring that has a coefficient of thermal expansion (CTE) in the range of about 3 to about 7.5 ppm/° C., contacting at least a portion of a metallic component within the cell, and an adjacent ceramic component. An active braze alloy composition attaches and hermetically seals the ring to the metallic component and the collar. Sodium metal halide batteries that contain this type of cell are also described, along with methods for sealing structures within the cell.

A carrier structure (100), particularly for optical components, includes a carrier body (10) which is formed from ceramic with hollows (11), and at least one cover layer (21, 22) which is formed from glass, arranged on at least one surface of the carrier body (10), and is connected to the carrier body (10) by means of at least one bond connection (23, 24) produced by means of anodic bonding. Methods for producing the carrier structure (100) and the use of the carrier structure as a mirror body, carrier for optical components and/or mechanical carrier for dynamically moved components are also described.

This copper/ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of aluminum nitride, in which the copper member and the ceramic member are bonded to each other, and a Mg—O layer is formed at a bonding interface between the copper member and the ceramic member.

Polycrystalline diamond compacts having parting compound within the interstitial volumes are disclosed herein. In one embodiment, a polycrystalline diamond compact includes a polycrystalline diamond body having a plurality of diamond grains bonded together in diamond-to-diamond bonds, interstitial volumes positioned between the adjacent diamond grains, and a parting compound positioned in at least a portion of the interstitial volumes of the polycrystalline diamond body.

The invention relates to a method of joining substrates. It is the object of the invention in this respect to join substrates of substrate materials together without having to exert an increased effort for a coating with additional coating processes to be carried out and to be able to achieve a good quality of the join connection in so doing. In the method in accordance with the invention a pretreatment of at least one join surface of a substrate to be joined is carried out in low pressure oxygen plasma prior to the actual joining. On the joining, a contact force acts on the substrates to be joined in the range 2 kPa to 5 MPa and in this process a heat treatment is carried out at an elevated temperature of at least 100° C. and at under pressure conditions of a maximum of 10 mbar, preferably <10.sup.−3 mbar.

A configuration for joining a ceramic layer has a thermal insulating material to a metallic layer. The configuration includes an interface layer made of metallic material located between the ceramic layer and the metallic layer, which includes a plurality of interlocking elements on one of its sides, facing the ceramic layer, the ceramic layer comprising a plurality of cavities aimed at connecting with the corresponding interlocking elements of the interface layer. The configuration also includes a brazing layer by means of which the interface layer is joint to the metallic layer. The invention also refers to a method for obtaining such a configuration.

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

This A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of oxygen-containing ceramics, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is formed on a ceramic member side between the copper member and the ceramic member, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer.