A cylindrical sputtering target according to the present invention comprises: a metallic cylindrical substrate; and a ceramic cylindrical target material joined to an outer peripheral side of the cylindrical substrate and integrally formed so as to have a length of 750 mm or more in an axial direction, wherein a variation coefficient of a bulk resistivity in an axial direction is 0.05 or less on the outer peripheral surface of the cylindrical target material.

A method for joining an optical part made of quartz glass and a supporting part made of ceramic includes forming a metal layer on a surface of the supporting part by electroless plating, polishing the formed metal layer with a polishing pad to form a first smoothed face on the supporting part surface, polishing a surface of the optical part with the polishing pad to form a second smoothed face, cleaning the first smoothed face and the second smoothed face with ultrasonic cleaning water, forming a first metal film on the first smoothed face by vapor deposition and forming a second metal film on the second smoothed face by vapor deposition, and joining the first metal film and the second metal film to each other by interatomic joining by atomic diffusion between the faces at which the first metal film and the second metal film contact with each other.

A method for producing a composite material comprising a planar base material to which an additional layer is applied on one side or both sides via a solder layer, characterized by: providing the base material, wherein the base material has a first surface on at least one side; providing the additional layer and arranging the solder layer between a second surface of the additional layer and the first surface such that when the additional layer is deposited on the first surface, the first surface of the base material is covered by the solder layer in a planar manner; wherein a thickness of the solder layer between the base material and the additional layer is smaller than 12 m; heating the base material and the additional layer on the first surface to at least partially melt the solder layer; and connecting the base material to the at least one additional layer.

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm.sup.2 and/or a linear power density of at least 1 W/mm.

Provided are a heat dissipating substrate and a preparation method thereof, which can form a precise pattern in a thick electrode metal plate and improve insulating strength and peel strength. heat dissipating substrate for semiconductor may include: an electrode metal plate having a plurality of electrode patterns which are electrically insulated from each other by a pattern space formed therebetween; a metal base disposed under the electrode metal plate, and configured to diffuse heat conducted from the electrode metal plate; an insulating layer formed between the electrode metal plate and the metal base; and an insulating material filled portion configured to fill the pattern space and a peripheral portion outside an electrode pattern group composed of the plurality of electrode patterns, and support the electrode patterns while brought in direct contact with side surfaces of the plurality of electrode patterns.

The present disclosure is directed to light converter assemblies with enhanced heat dissipation. A light converter assembly may comprise a confinement material applied to at least a first substrate and a phosphor material also deposited on the first substrate so as to be surrounded by the confinement material. The first substrate may be hermetically sealed to a second substrate using the confinement material so that the phosphor material is confined between the substrates and protected from atmospheric contamination. The substrates may comprise, for example, sapphire to allow for light beam transmission and heat conductance. Confinement materials that may be employed to seal the first substrate to the second substrate may include, for example, silicon or a metal (e.g., silver, copper, aluminum, etc.) The phosphor material may comprise, for example, at least one quantum dot material.

Disclosed is provided a process for producing a bonded body by bonding a ceramic member made of a ceramic to a Cu member made of Cu or a Cu alloy, the process including: a laminating step of laminating the Cu member on a first surface side of the ceramic member via a brazing material containing Cu and a eutectic element which has a eutectic reaction with Cu, and via an active metal; and a heating step of heating the ceramic member and the Cu member which are laminated together.

Embodiments relate to polycrystalline diamond compacts (PDCs) that are less susceptible to liquid metal embrittlement damage due to the use of at least one transition layer between a polycrystalline diamond (PCD) layer and a substrate. In an embodiment, a PDC includes a PCD layer, a cemented carbide substrate, and at least one transition layer bonded to the substrate and the PCD layer. The at least one transition layer is formulated with a coefficient of thermal expansion (CTE) that is less than a CTE of the substrate and greater than a CTE of the PCD layer. At least a portion of the PCD layer includes diamond grains defining interstitial regions and a metal-solvent catalyst occupying at least a portion of the interstitial regions. The diamond grains and the catalyst collectively exhibit a coercivity of about 115 Oersteds or more and a specific magnetic saturation of about 15 Gauss.Math.cm.sup.3/grams or less.

The present invention relates to a NbO.sub.2 sintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of Nb.sub.2O.sub.5 relative to the X-ray diffraction peak intensity of a (400) plane of NbO.sub.2 is 1% or less. The present invention provides, without using an expensive NbO.sub.2 material, a NbO.sub.2 sintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbO.sub.2 sintered compact having a high density suitable for stabilizing sputtering.

Methods of and apparatuses for making a photovoltaic cell are provided. The photovoltaic cell is able to have a substrate made of a composite material. The composite material is able to be formed by mixing a binder and a physical property enhancing material to form a mixer. The binder is able to be pitch, such as mesophase pitch. The physical property enhancing material is able to be fiber glass. The substrate of the photovoltaic cell is able to be flexible, such that the photovoltaic cell is able to be applied on various surfaces.