Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

In some examples, techniques of repairing and/or reinforcing oxide-oxide ceramic matrix composite (CMC) materials using a metallic material. In one example, a method including applying a metallic material at an edge of an oxide-oxide CMC substrate; and heating the metallic material to diffuse the metal material into the oxide-oxide CMC substrate at the edge. In another example, a method including applying a metallic material onto a damaged area of the oxide-oxide CMC; applying a reinforcing phase material onto the damaged area of the oxide-oxide CMC; and heating the metallic material to diffuse the metallic material into the oxide-oxide CMC and attach the reinforcing phase material to the damaged area of the oxide-oxide CMC.

A spark plug connecting element. The spark plug connecting element includes a first contact element and a second contact element. A resistor element is situated between the first contact element and the second contact element. The first contact element and the second contact element have a specific conductivity of 10.sup.2 S/m to 10.sup.8 S/m and the resistor element has a specific conductivity of 10.sup.−3 S/m to 10.sup.1 S/m.

A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2),
wherein the first thickness (D1) is less than 250 μm and the second thickness (D2) is greater than 200 μm and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1)
has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

A method of manufacturing a heating block includes a first step of providing a ceramic material to a mold, a second step of sintering the ceramic material and forming a plate, and a third step of machining the plate. A shaft is connected to the plate in a fourth step, and rods are bonded to the plate in a fifth step of the method. Heating blocks and semiconductor processing systems having heating blocks are also described.

Method of manufacturing a metal-ceramic substrate (1) which, in the finished state, has a ceramic layer (11) and a metal layer (12) extending along a main extension plane (HSE) and arranged one above the other along a stacking direction (S) extending perpendicularly to the main extension plane (HSE) comprising providing the metal layer (12) and the ceramic layer (11) and bonding the metal layer (12) to the ceramic layer (11) in regions to form a first region (B1), which has a materially bonded connection between the metal layer (12) and the ceramic layer (11), and a second region (B2), in which the metal layer (12) and the ceramic layer (11) are arranged one above the other without a materially bonded connection, as seen in the stacking direction (S).

The present application relates to a method of laser ablation of a metal-ceramic substrate, in which a laser is used under process conditions in which the formation of solid metal particles on the metal-ceramic substrate, which can separate from metal particles released by laser ablation near the ablation edge, is essentially avoided. Further the present application relates to a ceramic-metal substrate comprising a ceramic substrate and a metallization on at least one side of the ceramic substrate, wherein the ceramic substrate and the metallization have flush cutting edge.

Thermally-conductive ceramic and ceramic composite components suitable for high temperature applications, systems having such components, and methods of manufacturing such components. The thermally-conductive components are formed by a displacive compensation of porosity (DCP) process and are suitable for use at operating temperatures above 600° C. without a significant reduction in thermal and mechanical properties.

A rotor assembly is provided for a gas turbine engine. This rotor assembly includes a first rotor disk, a second rotor disk, a plurality of rotor blades and a plurality of vanes. The first rotor disk is configured to rotate about a rotational axis. The second rotor disk is configured to rotate about the rotational axis. The rotor blades are arranged circumferentially around the rotational axis. Each of the rotor blades is axially between and mounted to the first rotor disk and the second rotor disk. The vanes are arranged circumferentially around the rotational axis. The vanes include a first vane that is integral with the first rotor disk and projects axially to the second rotor disk.

The invention relates to a spark plug connecting element, which includes a first contact element (9a) and a second contact element (9b), a resistor element (8) being situated between the first contact element (9a) and the second contact element (9b), the first contact element (9a) and the second contact element (9b) having a specific conductivity of 10.sup.2 S/m to 10.sup.8 S/m and the resistor element (8) having a specific conductivity of 10.sup.−3 S/m to 10.sup.1 S/m.