A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

A piezoelectric thin-film element includes a first electrode layer, a piezoelectric thin film stacked on the first electrode layer, and a second electrode layer stacked on the piezoelectric thin film. A performance index P of the piezoelectric thin film is defined as (d.sub.33,f).sup.2?Y/?. d.sub.33,f is a piezoelectric strain constant of thickness longitudinal vibration of the piezoelectric thin film. Y is a Young's modulus of the piezoelectric thin film. ? is a permittivity of the piezoelectric thin film. The performance index P is from 10% to 80.1%.

An assembly for use in a gas turbine engine and method for making the same are described herein. The assembly comprising a CMC component, a metallic component spaced apart from the CMC component, and a spacer. The spacer having a first surface in contact with the CMC and a second surface opposite the first surface in contact with the metallic component, the spacer comprising a CMC substantially free of silicon metal with a porosity of between about 5 percent and about 40 percent by volume to chemically isolate the CMC component from the metallic component.

Thermally-conductive ceramic and ceramic composite components suitable for high temperature applications, systems having such components, and methods of manufacturing such components. The thermally-conductive components are formed by a displacive compensation of porosity (DCP) process and are suitable for use at operating temperatures above 600 C. without a significant reduction in thermal and mechanical properties.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<.sub.1/.sub.2<0.9 and relational expression (2) 0.7<.sub.3/.sub.4<0.9 holds, where .sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30 C. to 300 C. and .sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30 C. to 300 C., and .sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30 C. to 1000 C. and .sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30 C. to 1000 C.

The present invention relates to a module (1) which comprises a power semiconductor device (2) and a ceramic capacitor (3) which is configured for cooling the power semiconductor device (2).

There is provided a component formed from a plurality of laminates stacked on one another, thereby defining a stacked laminate structure having a leading edge and a trailing edge. Each of the plurality of laminates is formed from a ceramic matrix composite material. In addition, a plurality of interior cooling channels are defined within an interior of the stacked laminate structure and extend longitudinally between the leading edge and the trailing edge. A metal support structure is arranged so as to extend through first openings in the laminates and through the stacked laminate structure.

A transaction card includes a card body that may comprise a card body comprising a ceramic material, the card body including a primary surface and a first mating surface. A card backer comprises a metallic material and includes a secondary surface and a second mating surface. A portion of the first mating surface and a portion of the second mating surface are coupled together.

A method for fabricating assemblies that includes providing a first component that further includes silicon carbide and that has an upper portion and a tapered lower portion; providing a second component that further includes silicon carbide and that has an upper portion that is adapted to receive the tapered lower portion of the first component; providing a predetermined amount of multiphase AlSi braze foil; grinding the AlSi braze foil into a powder; mixing a predetermined amount of braze paste binder with the AlSi powder to form a slurry; uniformly applying the slurry to the tapered lower portion of the first component; uniformly applying the slurry to the upper portion of the second component and inserting the tapered lower portion of the first component into the upper portion of the second component; and heating the applied slurry to a temperature of 725 C. to 1450 C. for a predetermined period of time.

The invention relates to a copper-ceramic composite comprising: a ceramic substrate containing alumina; a copper or copper alloy coating on the ceramic substrate; the alumina has a mean grain shape factor R.sub.a(Al.sub.2O.sub.3), defined as the arithmetic mean of the shape factors R of the alumina grains, of at least 0.4.