C04B2237/52

Ceramic circuit substrate and method for producing ceramic circuit substrate
10485112 · 2019-11-19 · ·

A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.

Method for manufacturing active metal-brazed nitride ceramic substrate with excellent joining strength
11964919 · 2024-04-23 · ·

A method for manufacturing active metal-brazed a nitride ceramics substrate having excellent joining strength, includes: a step of preparing a mixed raw material; a step of forming a green sheet of the mixed raw material by a tape casting method; a step of removing a binder by performing degreasing; a step of performing sintering; a step of forming an aluminum nitride sintered substrate by performing gradual cooling; and a step of printing a conductive wiring pattern with active metal paste on the aluminum nitride sintered substrate.

Electrostatic chuck

An electrostatic chuck includes a dielectric layer including an oriented alumina sintered body having a degree of c-plane orientation of 5% or more, the degree of c-plane orientation being determined by a Lotgering method using an X-ray diffraction profile obtained by the irradiation of an X-ray in the 2 range of 20 to 70; a ceramic layer integrated with a surface disposed opposite a wafer placement surface of the dielectric layer; and an electrostatic electrode between the dielectric layer and the ceramic layer.

JOINING METHOD FOR OPTICAL PART
20190315646 · 2019-10-17 ·

A method for joining an optical part made of quartz glass and a supporting part made of ceramic includes forming a metal layer on a surface of the supporting part by electroless plating, polishing the formed metal layer with a polishing pad to form a first smoothed face on the supporting part surface, polishing a surface of the optical part with the polishing pad to form a second smoothed face, cleaning the first smoothed face and the second smoothed face with ultrasonic cleaning water, forming a first metal film on the first smoothed face by vapor deposition and forming a second metal film on the second smoothed face by vapor deposition, and joining the first metal film and the second metal film to each other by interatomic joining by atomic diffusion between the faces at which the first metal film and the second metal film contact with each other.

Method for producing a composite material

A method for producing a composite material comprising a planar base material to which an additional layer is applied on one side or both sides via a solder layer, characterized by: providing the base material, wherein the base material has a first surface on at least one side; providing the additional layer and arranging the solder layer between a second surface of the additional layer and the first surface such that when the additional layer is deposited on the first surface, the first surface of the base material is covered by the solder layer in a planar manner; wherein a thickness of the solder layer between the base material and the additional layer is smaller than 12 m; heating the base material and the additional layer on the first surface to at least partially melt the solder layer; and connecting the base material to the at least one additional layer.

EPITAXY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90 is between the bevel of the device substrate and the handle substrate.

Ceramic matrix composite component and method of producing the same

A ceramic matrix composite component includes a first substrate and a second substrate each formed of a silicide-containing ceramic matrix composite, silicon carbide layers respectively coating a bonding surface of the first substrate and a bonding surface of the second substrate, and a bonding layer formed of a silicon-containing alloy and provided between the silicon carbide layer coating the bonding surface of the first substrate and the silicon carbide layer coating the bonding surface of the second substrate.

BRAZED JOINT AND SEMICONDUCTOR PROCESSING CHAMBER COMPONENT HAVING THE SAME
20190226512 · 2019-07-25 ·

Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.

COMPOSITE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.

Supporting substrate for composite substrate and composite substrate

A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.