A ceramic substrate is provided with a flat plate-shaped insulating base including a ceramic, a first brazing material layer provided on a first main surface of the insulating base, a second brazing material layer provided on a second main surface of the insulating base, a first metal layer including a metal and being fixed through the first brazing material layer to the insulating base on a first main surface-side, and a second metal layer including a metal and being fixed through the second brazing material layer to the insulating base on a second main surface-side. A difference between a thickness of the first brazing material layer and a thickness of the second brazing material layer at a given point is 4.0 .Math.m or less.

An electrostatic chuck includes a ceramic top plate layer made of a beryllium oxide material, a ceramic bottom plate layer made of a beryllium oxide material, a ceramic middle plate layer disposed between the ceramic top plate layer and the ceramic bottom plate layer, an electrode layer disposed between the ceramic top plate layer and the ceramic middle plate layer, and a heater layer disposed between the ceramic middle plate layer and the ceramic bottom plate layer. The electrode layer joins and hermetically seals the ceramic top plate layer to the ceramic middle plate layer, and the heater layer joins and hermetically seals the ceramic middle plate layer to the ceramic bottom plate layer.

A ceramic joined body includes: a pair of ceramic plates; and an electrode layer that is interposed between the pair of ceramic plates, in which the electrode layer is embedded in at least one of the pair of ceramic plates, and in an outer edge of the electrode layer, a joint surface between the at least one of the pair of ceramic plates and the electrode layer has an inclination with respect to a thickness direction of the pair of ceramic plates and the electrode layer.

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A polycrystalline diamond compact including a cemented carbide substrate and a polycrystalline diamond layer bonded to the cemented carbide substrate. The polycrystalline diamond layer is nonplanar and includes a central part and a peripheral part surrounding the central part. The central part includes a protruding surface relative to the peripheral part. The protruding surface is spherical or planar. The peripheral part includes a plurality of radially-disposed ridges.

In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises Al.sub.2O.sub.3 single crystals, and wherein the conversion element comprises at least one groove.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

The invention relates to a method for the preparation of a blank from a ceramic material, wherein at least two layers of ceramic material of different compositions are filled into a die layer-by-layer and after filling of the layers they are then pressed and sintered, wherein after filling of a first layer this is structured on its surface in such a way that the first layer, viewed across its surface, differs in its height from region to region, and then a layer with a composition that differs from the first layer is filled as a second layer into the mold.

Various embodiments include a metal-repaired ceramic matrix composite (CMC) article, and a method of repairing a CMC article having a defect. Particular embodiments include a method including: removing a defect-containing portion of the CMC article; forming at least one opening in a remaining portion of the CMC article; preparing a metal repair preform for replacing at least the removed portion of the CMC article, wherein a portion of the metal repair preform complements the at least one opening; and attaching the metal repair preform to the remaining portion of the CMC article.