A method for producing an organometallic nucleophile includes reacting an organohalide and a metal or metal compound with each other by a mechanochemical process in the presence of an ether compound in an amount of 0.5 to 10.0 equivalents relative to 1 equivalent of the organohalide. By utilizing the method, a method for producing an organometallic nucleophile can be performed without using a large-scale apparatus, a reaction method for reactions between an organometallic nucleophile and various organic electrophiles can be performed by an efficient and simplified means, and a simplified method for producing an organometallic nucleophile can be performed with high reactivity.

A metal cyclopentadienyl complex has the formula:

##STR00001##

wherein m≥0; M is a Group I, II or III main group metal, alkali or transition metal; C.sub.5H.sub.4 represents a Cp ring where two hydrogens are substituted by M and R(F).sub.m; R(F).sub.m is connected to any one of the carbon atoms of the Cp and selected from a hydrocarbyl, fluorohydrocarbyl, silyl group [SiR′.sub.3], or amino group [—NR.sup.1R.sup.2]. The metal cyclopentadienyl complexes include Li(C.sub.5H.sub.4-2-C.sub.5H.sub.11) (CAS No: 2413046-23-6), K(C.sub.5H.sub.4-2-C.sub.5H.sub.11), Na(C.sub.5H.sub.4-2-C.sub.5H.sub.11), K(C.sub.5H.sub.4-1-F—C.sub.4H.sub.10), K(C.sub.5H.sub.4-1,1,1-3F—C.sub.4H.sub.6), Li(C.sub.5H.sub.4-2-C.sub.4H.sub.9), or In(C.sub.5H.sub.4-2-C.sub.5H.sub.11) (CAS No.: 2364634-67-1).

A mono-substituted cyclopentadiene has the formula:

##STR00002##

wherein m≥0; C.sub.5H.sub.5 represents the Cp ring where one hydrogen is substituted R(F).sub.m; R(F).sub.m is connected to any one of the carbon atoms of the Cp and selected from a hydrocarbyl, fluorohydrocarbyl, silyl group [SiR′.sub.3], or amino group [—NR.sup.1R.sup.2]. The mono-substituted cyclopentadienes include C.sub.5H.sub.5-1-F—C.sub.4H.sub.10, C.sub.5H.sub.5-2-C.sub.5H.sub.11, C.sub.5H.sub.5-2-C.sub.4H.sub.9, or C.sub.5H.sub.5-1,1,1-3F—C.sub.4H.sub.6.

A metal cyclopentadienyl complex has the formula:

##STR00001##

wherein m≥0; M is a Group I, II or III main group metal, alkali or transition metal; C.sub.5H.sub.4 represents a Cp ring where two hydrogens are substituted by M and R(F).sub.m; R(F).sub.m is connected to any one of the carbon atoms of the Cp and selected from a hydrocarbyl, fluorohydrocarbyl, silyl group [SiR′.sub.3], or amino group [—NR.sup.1R.sup.2]. The metal cyclopentadienyl complexes include Li(C.sub.5H.sub.4-2-C.sub.5H.sub.11) (CAS No: 2413046-23-6), K(C.sub.5H.sub.4-2-C.sub.5H.sub.11), Na(C.sub.5H.sub.4-2-C.sub.5H.sub.11), K(C.sub.5H.sub.4-1-F—C.sub.4H.sub.10), K(C.sub.5H.sub.4-1,1,1-3F—C.sub.4H.sub.6), Li(C.sub.5H.sub.4-2-C.sub.4H.sub.9), or In(C.sub.5H.sub.4-2-C.sub.5H.sub.11) (CAS No.: 2364634-67-1).

A mono-substituted cyclopentadiene has the formula:

##STR00002##

wherein m≥0; C.sub.5H.sub.5 represents the Cp ring where one hydrogen is substituted R(F).sub.m; R(F).sub.m is connected to any one of the carbon atoms of the Cp and selected from a hydrocarbyl, fluorohydrocarbyl, silyl group [SiR′.sub.3], or amino group [—NR.sup.1R.sup.2]. The mono-substituted cyclopentadienes include C.sub.5H.sub.5-1-F—C.sub.4H.sub.10, C.sub.5H.sub.5-2-C.sub.5H.sub.11, C.sub.5H.sub.5-2-C.sub.4H.sub.9, or C.sub.5H.sub.5-1,1,1-3F—C.sub.4H.sub.6.

The present invention relates to a process for the preparation of fluorinated compounds, to novel compounds containing fluorinated end groups, to the use thereof and to compositions comprising novel compounds containing fluorinated end groups.

The present invention relates to a process for the preparation of fluorinated compounds, to novel compounds containing fluorinated end groups, to the use thereof and to compositions comprising novel compounds containing fluorinated end groups.

Disclosed are mono-substituted cyclopentadienes, metal cyclopentadienyl complexes and methods for synthesizing them. The disclosed mono-substituted cyclopentadienes are synthesized by a selective catalytic carbon-carbon coupling reaction. The disclosed metal cyclopentadienyl complexes are synthesized from the disclosed mono-substituted cyclopentadienes. The disclosed metal cyclopentadienyl complexes include main group metal and transition metal cyclopentadienyl complexes, and may be used as deposition precursors contained in film forming compositions for film depositions in semiconductor industry, such as ALD, CVD, SOD, etc.

Disclosed are mono-substituted cyclopentadienes, metal cyclopentadienyl complexes and methods for synthesizing them. The disclosed mono-substituted cyclopentadienes are synthesized by a selective catalytic carbon-carbon coupling reaction. The disclosed metal cyclopentadienyl complexes are synthesized from the disclosed mono-substituted cyclopentadienes. The disclosed metal cyclopentadienyl complexes include main group metal and transition metal cyclopentadienyl complexes, and may be used as deposition precursors contained in film forming compositions for film depositions in semiconductor industry, such as ALD, CVD, SOD, etc.

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

An industrially excellent production method for cycloalkyl(trifluoromethyl)benzene is free of complicated steps, small in the number of steps, and high in production efficiency. Cycloalkyl(trifluoromethyl)benzene is produced by reacting a halogen-substituted trifluoromethyl benzene with magnesium metal to produce a Grignard reagent and cross-coupling the Grignard reagent with a cycloalkyl halide in the presence of an iron salt or a cobalt salt at a reaction temperature of 60° C. to 80° C.