A method for conversion of a composition containing HCFO-1233zd(Z) and HCFC-244fa to form HCFO-1233zd(E) by reacting a mixture including HCFO-1233zd(Z) and HCFC-244fa in a vapor phase in the presence of a catalyst to simultaneously isomerize HCFO-1233zd(Z) to form HCFO-1233zd(E) and dehydrohalogenate HCFC-244fa to form HCFO-1233zd(E). The catalyst may be a chromium-based catalyst such as chromium trifluoride, chromium oxyfluoride, or chromium oxide, for example.

A method for conversion of a composition containing HCFO-1233zd(Z) and HCFC-244fa to form HCFO-1233zd(E) by reacting a mixture including HCFO-1233zd(Z) and HCFC-244fa in a vapor phase in the presence of a catalyst to simultaneously isomerize HCFO-1233zd(Z) to form HCFO-1233zd(E) and dehydrohalogenate HCFC-244fa to form HCFO-1233zd(E). The catalyst may be a chromium-based catalyst such as chromium trifluoride, chromium oxyfluoride, or chromium oxide, for example.

A process for making 2,3,3,3-tetrafluoropropene (HFO-1234yf) includes providing a composition including 2-chloro-1,1,1,2-tetrafluorepropane (HCFC-244bb) to a reactor including a heater surface at a surface temperature greater than about 850° F. (454°C), and then bringing the composition into contact with the heater surface for a contact time of less than 10 seconds to dehydrochlorinate a portion of the HCFC-244bb to make HFO-1234yf.

A process for making 2,3,3,3-tetrafluoropropene (HFO-1234yf) includes providing a composition including 2-chloro-1,1,1,2-tetrafluorepropane (HCFC-244bb) to a reactor including a heater surface at a surface temperature greater than about 850° F. (454°C), and then bringing the composition into contact with the heater surface for a contact time of less than 10 seconds to dehydrochlorinate a portion of the HCFC-244bb to make HFO-1234yf.

The present invention relates to a method for producing high-purity 1,1,1,2,3,3-hexafluoropropane and a composition containing mainly 1,1,1,2,3,3-hexafluoropropane, suitable for use as a cleaning agent in the semiconductor industry.

The present invention relates to a method for producing high-purity 1,1,1,2,3,3-hexafluoropropane and a composition containing mainly 1,1,1,2,3,3-hexafluoropropane, suitable for use as a cleaning agent in the semiconductor industry.

The present invention relates to a method for producing high-purity 1,1,1,2,3,3-hexafluoropropane and a composition containing mainly 1,1,1,2,3,3-hexafluoropropane, suitable for use as a cleaning agent in the semiconductor industry.

A process for producing a reaction mixture comprising a plurality of C.sub.3 chlorinated alkane isomers comprising chlorinating a C.sub.3 chlorinated alkane starting material in a chlorination zone to produce the plurality of C.sub.3 chlorinated alkane isomers, the plurality of C.sub.3 chlorinated alkane isomers each having at least one more chlorine atom than the C.sub.3 chlorinated alkane starting material, wherein the concentration of the C.sub.3 chlorinated alkane starting material is controlled such that conversion of the C.sub.3 chlorinated alkane starting material to the plurality of C.sub.3 chlorinated alkane isomers, represented by the molar ratio of the C.sub.3 chlorinated alkane starting material:C.sub.3 chlorinated alkane isomers in the reaction mixture present in the chlorination zone, does not exceed about 40:60.

A process for producing a reaction mixture comprising a plurality of C.sub.3 chlorinated alkane isomers comprising chlorinating a C.sub.3 chlorinated alkane starting material in a chlorination zone to produce the plurality of C.sub.3 chlorinated alkane isomers, the plurality of C.sub.3 chlorinated alkane isomers each having at least one more chlorine atom than the C.sub.3 chlorinated alkane starting material, wherein the concentration of the C.sub.3 chlorinated alkane starting material is controlled such that conversion of the C.sub.3 chlorinated alkane starting material to the plurality of C.sub.3 chlorinated alkane isomers, represented by the molar ratio of the C.sub.3 chlorinated alkane starting material:C.sub.3 chlorinated alkane isomers in the reaction mixture present in the chlorination zone, does not exceed about 40:60.

A process for producing a reaction mixture comprising a plurality of C.sub.3 chlorinated alkane isomers comprising chlorinating a C.sub.3 chlorinated alkane starting material in a chlorination zone to produce the plurality of C.sub.3 chlorinated alkane isomers, the plurality of C.sub.3 chlorinated alkane isomers each having at least one more chlorine atom than the C.sub.3 chlorinated alkane starting material, wherein the concentration of the C.sub.3 chlorinated alkane starting material is controlled such that conversion of the C.sub.3 chlorinated alkane starting material to the plurality of C.sub.3 chlorinated alkane isomers, represented by the molar ratio of the C.sub.3 chlorinated alkane starting material:C.sub.3 chlorinated alkane isomers in the reaction mixture present in the chlorination zone, does not exceed about 40:60.