Disclosed is a method for producing 1,4-dibromo-2,3-dichlorohexafluorobutane (BrCF.sub.2CFClCFClCF.sub.2Br), in which, through the photoreaction of 1,2-dibromo-1-chlorotrifluoroethane (BrCF2-CFClBr) with a CTFE (CF2CFCl) gas mixed with a diluent gas, 1,4-dibromo-2,3-dichlorohexafluorobutane is produced. According to an embodiment of the present disclosure, an intermediate for producing hexafluoro-1,3-butadiene (C.sub.4F.sub.6) can be produced with high production yield.

Disclosed is a method for producing 1,4-dibromo-2,3-dichlorohexafluorobutane (BrCF.sub.2CFClCFClCF.sub.2Br), in which, through the photoreaction of 1,2-dibromo-1-chlorotrifluoroethane (BrCF2-CFClBr) with a CTFE (CF2CFCl) gas mixed with a diluent gas, 1,4-dibromo-2,3-dichlorohexafluorobutane is produced. According to an embodiment of the present disclosure, an intermediate for producing hexafluoro-1,3-butadiene (C.sub.4F.sub.6) can be produced with high production yield.

The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, and a semiconductor substrate fabricated using the method. According to the present invention, side reactions may be suppressed by using a film quality improver having a predetermined structure in a thin film deposition process, and process by-products in a thin film may be removed by appropriately controlling a thin film growth rate. As a result, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the electrical properties of the thin film may be improved due to improvement in the crystallinity of the thin film.

The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, and a semiconductor substrate fabricated using the method. According to the present invention, side reactions may be suppressed by using a film quality improver having a predetermined structure in a thin film deposition process, and process by-products in a thin film may be removed by appropriately controlling a thin film growth rate. As a result, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the electrical properties of the thin film may be improved due to improvement in the crystallinity of the thin film.

The present disclosure provides pyrrolopyrimidine nucleoside analogs of the Formula I, Formula IA, Formula IB, or Formula II and phospholipid conjugates and pharmaceutical compositions thereof wherein R.sub.c and A are defined herein. Also presented are methods of treating and/or preventing viral infection and/or viral infection-associated disease or disorder with one or more compounds of Formula I, Formula IA, Formula IB, or Formula II. ##STR00001##

An object of the present invention is to provide a production method that makes it possible to produce 1,1-dibromo-1-fluoroethane easily and sustainably. The present invention provides a method for producing 1,1-dibromo-1-fluoroethane, the method comprising step A of reacting 1,1-dibromoethylene with hydrogen fluoride to obtain 1,1-dibromo-1-fluoroethane.

An object of the present invention is to provide a production method that makes it possible to produce 1,1-dibromo-1-fluoroethane easily and sustainably. The present invention provides a method for producing 1,1-dibromo-1-fluoroethane, the method comprising step A of reacting 1,1-dibromoethylene with hydrogen fluoride to obtain 1,1-dibromo-1-fluoroethane.

An object of the present invention is to provide a production method that makes it possible to produce 1,1-dibromo-1-fluoroethane easily and sustainably. The present invention provides a method for producing 1,1-dibromo-1-fluoroethane, the method comprising step A of reacting 1,1-dibromoethylene with hydrogen fluoride to obtain 1,1-dibromo-1-fluoroethane.

Production of HFO-1132 and, in particular, HFO-1132E, is produced from chlorotrifluoroethylene (CTFE) and/or trifluoroethylene (HFO-1123). In a first step, 1,1,2-trifluoroethane (HFC-143) is produced by hydrogenating chlorotrifluoroethylene (CTFE) and/or trifluoroethylene (HFO-1123) by reaction with hydrogen in the presence of a catalyst at a temperature of between about 75 C. and about 225 C. The 1,1,2-trifluoroethane (HFC-143) may then be dehydrohalogenated in the presence of a catalyst to produce trans-1,2-difluoroethylene (HFO-1132E) and cis-1,2-difluoroethylene (HFO-1132Z). The cis-1,2-difluoroethylene (HFO-1132Z) may then be isomerized to produce trans-1,2-difluoroethylene (HFO-1132E).

Production of HFO-1132 and, in particular, HFO-1132E, is produced from chlorotrifluoroethylene (CTFE) and/or trifluoroethylene (HFO-1123). In a first step, 1,1,2-trifluoroethane (HFC-143) is produced by hydrogenating chlorotrifluoroethylene (CTFE) and/or trifluoroethylene (HFO-1123) by reaction with hydrogen in the presence of a catalyst at a temperature of between about 75 C. and about 225 C. The 1,1,2-trifluoroethane (HFC-143) may then be dehydrohalogenated in the presence of a catalyst to produce trans-1,2-difluoroethylene (HFO-1132E) and cis-1,2-difluoroethylene (HFO-1132Z). The cis-1,2-difluoroethylene (HFO-1132Z) may then be isomerized to produce trans-1,2-difluoroethylene (HFO-1132E).