An object of the present invention is to provide a method for producing a cycloalkyl bromide without using heavy metals and the like. The present invention provides a method for producing a compound represented by Formula (2) wherein R represents an optionally substituted C3-C4 cycloalkyl group, by reacting a compound represented by Formula (1) wherein R represents the same meaning as described above, and M represents an alkali metal, with bromine in presence of a radical initiator or under light irradiation.

The production of 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane (TFMCB). More specifically, the present invention relates to a process for making 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane via a continuous catalytic reaction from commercially available raw materials ethylene and hexafluoropropene.

The production of 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane (TFMCB). More specifically, the present invention relates to a process for making 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane via a continuous catalytic reaction from commercially available raw materials ethylene and hexafluoropropene.

A heat transfer composition for transferring heat and/or energy to and/or from an article, device or fluid, wherein the heat transfer composition comprises, consists essentially of or consists of a compound according to Formula I or Formula II or Formula III:

##STR00001## where each R and each R is independently selected from H, F, Cl, R1, and OR1, each R1 is independently: a C1 to C3 alkane that is unsubstituted or substituted with F and/or Cl; or C1 to C3 alkene that is unsubstituted or substituted with F and/or Cl; or Bz, where Bz is an unsubstituted benzene ring, and provided that the molecule has at least three F substituents bonded to a carbon in the cyclobutene ring.

A heat transfer composition for transferring heat and/or energy to and/or from an article, device or fluid, wherein the heat transfer composition comprises, consists essentially of or consists of a compound according to Formula I or Formula II or Formula III:

##STR00001## where each R and each R is independently selected from H, F, Cl, R1, and OR1, each R1 is independently: a C1 to C3 alkane that is unsubstituted or substituted with F and/or Cl; or C1 to C3 alkene that is unsubstituted or substituted with F and/or Cl; or Bz, where Bz is an unsubstituted benzene ring, and provided that the molecule has at least three F substituents bonded to a carbon in the cyclobutene ring.

The production of 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane (TFMCB). More specifically, the present invention relates to a process for making 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane via a continuous catalytic reaction from commercially available raw materials ethylene and hexafluoropropene.

The production of 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane (TFMCB). More specifically, the present invention relates to a process for making 1, 1, 2-trifluoro-2-(trifluoromethyl)cyclobutane via a continuous catalytic reaction from commercially available raw materials ethylene and hexafluoropropene.

The production of 1,1,2-trifluoro-2-(trifluoromethyl)cyclobutane (TFMCB). More specifically, the present invention relates to a process for making 1,1,2-trifluoro-2-(trifluoromethyl)cyclobutane via a continuous catalytic reaction from commercially available raw materials ethylene and hexafluoropropene.

The production of 1,1,2-trifluoro-2-(trifluoromethyl)cyclobutane (TFMCB). More specifically, the present invention relates to a process for making 1,1,2-trifluoro-2-(trifluoromethyl)cyclobutane via a continuous catalytic reaction from commercially available raw materials ethylene and hexafluoropropene.

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.