A hydrofluoroolefin compound is represented by the following general formula (I): where R.sub.F1 is a hydrogen atom or CH.sub.3, and (iii) R.sub.F1 is a linear or branched perfluorinated alkyl group having 1 to 10 carbon atoms and optionally including one or more catenated heteroatoms; and R.sub.F2 is a fluorine atom or a linear or branched perfluorinated alkyl group having 1 to 8 carbon atoms and optionally including one or more catenated heteroatoms; with the proviso that when RF2 is a fluorine atom, then RF1 includes at least 2 carbon atoms; or (iv) R.sub.F1 and R.sub.F2 are bonded together to form a ring structure having 4 to 8 carbon atoms and optionally including one or more catenated heteroatoms. ##STR00001##

A hydrofluoroolefin compound is represented by the following general formula (I): where R.sub.F1 is a hydrogen atom or CH.sub.3, and (iii) R.sub.F1 is a linear or branched perfluorinated alkyl group having 1 to 10 carbon atoms and optionally including one or more catenated heteroatoms; and R.sub.F2 is a fluorine atom or a linear or branched perfluorinated alkyl group having 1 to 8 carbon atoms and optionally including one or more catenated heteroatoms; with the proviso that when RF2 is a fluorine atom, then RF1 includes at least 2 carbon atoms; or (iv) R.sub.F1 and R.sub.F2 are bonded together to form a ring structure having 4 to 8 carbon atoms and optionally including one or more catenated heteroatoms. ##STR00001##

A hydrofluoroolefin compound is represented by the following general formula (I): where R.sub.F1 is a hydrogen atom or CH.sub.3, and (iii) R.sub.F1 is a linear or branched perfluorinated alkyl group having 1 to 10 carbon atoms and optionally including one or more catenated heteroatoms; and R.sub.F2 is a fluorine atom or a linear or branched perfluorinated alkyl group having 1 to 8 carbon atoms and optionally including one or more catenated heteroatoms; with the proviso that when RF2 is a fluorine atom, then RF1 includes at least 2 carbon atoms; or (iv) R.sub.F1 and R.sub.F2 are bonded together to form a ring structure having 4 to 8 carbon atoms and optionally including one or more catenated heteroatoms. ##STR00001##

Disclosed is a manufacturing method of 1,2-dichlorohexafluorocyclopentene. The first reaction uses dicyclopentadiene as a starting material and nitrogen gas or another inert gas as a diluting agent in a gas-phase thermal cracking reaction to obtain cyclopentadiene. The second reaction uses cyclopentadiene as a starting material in a liquid phase chlorination reaction with chlorine gas to obtain 1,2,3,4-tetrachlorocyclopentane. The third reaction uses 1,2,3,4-tetrachlorocyclopentane as a starting material in a gas-phase chlorination and fluorination reaction with hydrogen fluoride and chlorine gas in the presence of a chromium-based catalyst to obtain 1,2-dichlorohexafluorocyclopentene. The method uses easily acquired starting material and a stable fluorination catalyst, provides a high yield for a target product, and is applicable for large-scale continuous gas-phase production of 1,2-dichlorohexafluorocyclopentene.

Disclosed is a manufacturing method of 1,2-dichlorohexafluorocyclopentene. The first reaction uses dicyclopentadiene as a starting material and nitrogen gas or another inert gas as a diluting agent in a gas-phase thermal cracking reaction to obtain cyclopentadiene. The second reaction uses cyclopentadiene as a starting material in a liquid phase chlorination reaction with chlorine gas to obtain 1,2,3,4-tetrachlorocyclopentane. The third reaction uses 1,2,3,4-tetrachlorocyclopentane as a starting material in a gas-phase chlorination and fluorination reaction with hydrogen fluoride and chlorine gas in the presence of a chromium-based catalyst to obtain 1,2-dichlorohexafluorocyclopentene. The method uses easily acquired starting material and a stable fluorination catalyst, provides a high yield for a target product, and is applicable for large-scale continuous gas-phase production of 1,2-dichlorohexafluorocyclopentene.

The purpose of the present invention is to obtain a fluorine-containing compound which is easily stabilized without irradiation of ultraviolet light, by efficiently converting a CI bond in an iodine-containing compound having a group represented by CFRfI (wherein Rf is a fluorine atom or a perfluoroalkyl group) to a CH bond. A method for producing a fluorine-containing compound having an iodine atom content reduced than the following iodine-containing compound, which comprises subjecting an iodine-containing compound having a group represented by CFRfI (wherein Rf is a fluorine atom or a perfluoroalkyl group) to deiodinating treatment in the presence of an organic peroxide and a hydrogen-containing compound having a group represented by CHR.sup.1CHR.sup.2CHR.sup.3 (wherein R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom or an alkyl group).

The purpose of the present invention is to obtain a fluorine-containing compound which is easily stabilized without irradiation of ultraviolet light, by efficiently converting a CI bond in an iodine-containing compound having a group represented by CFRfI (wherein Rf is a fluorine atom or a perfluoroalkyl group) to a CH bond. A method for producing a fluorine-containing compound having an iodine atom content reduced than the following iodine-containing compound, which comprises subjecting an iodine-containing compound having a group represented by CFRfI (wherein Rf is a fluorine atom or a perfluoroalkyl group) to deiodinating treatment in the presence of an organic peroxide and a hydrogen-containing compound having a group represented by CHR.sup.1CHR.sup.2CHR.sup.3 (wherein R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom or an alkyl group).

The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.

The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.

The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.