C07C39/15

Inhibition of DYRK1A kinase

Novel compounds which inhibit DYRK1A activity comprise thymoquinone derivatives including a pair of substituted or unsubstituted six-membered carbon rings selected from phenyl and cyclohexadiene linked by an alkyl or alkenyl linker. Each six-membered ring includes at least one oxygen-bearing substituent selected from carbonyl oxygens, hydroxyls, alkoxyls, and halogenated derivatives thereof. The compounds can be administered to mammalian subjects for inhibition of DYRK1A kinase proteins.

Inhibition of DYRK1A kinase

Novel compounds which inhibit DYRK1A activity comprise thymoquinone derivatives including a pair of substituted or unsubstituted six-membered carbon rings selected from phenyl and cyclohexadiene linked by an alkyl or alkenyl linker. Each six-membered ring includes at least one oxygen-bearing substituent selected from carbonyl oxygens, hydroxyls, alkoxyls, and halogenated derivatives thereof. The compounds can be administered to mammalian subjects for inhibition of DYRK1A kinase proteins.

NOVEL 1,2-DIPHENYLETHYLENE GLYCOL COMPOUNDS FOR COMBATING AGING OF THE SKIN, AND COSMETIC USE THEREOF
20170362152 · 2017-12-21 ·

The present invention relates to novel compounds of formula (I)

##STR00001##

to cosmetic compositions comprising same, and also to the use thereof for preventing and/or cosmetically treating the signs of aging of the skin.

NOVEL 1,2-DIPHENYLETHYLENE GLYCOL COMPOUNDS FOR COMBATING AGING OF THE SKIN, AND COSMETIC USE THEREOF
20170362152 · 2017-12-21 ·

The present invention relates to novel compounds of formula (I)

##STR00001##

to cosmetic compositions comprising same, and also to the use thereof for preventing and/or cosmetically treating the signs of aging of the skin.

Pyrogallarene Chelating and Sequestering Agents
20230168203 · 2023-06-01 · ·

Pyrogallarene chelating and sequestering agents are disclosed. The chelating and sequestering agents may be used in a homogeneous environment or heterogeneous environment. In addition, chromogenic properties may be utilized to assess the chelation or sequestration of certain atoms.

PHOSPHONIUM-BASED COMPOUND, EPOXY RESIN COMPOSITION CONTAINING SAME, SEMICONDUCTOR DEVICE MANUFACTURED USING SAME

The present invention relates to a phosphonium-based compound represented by chemical formula 1, an epoxy resin composition containing the same, and a semiconductor device manufactured by using the same.

PHOSPHONIUM-BASED COMPOUND, EPOXY RESIN COMPOSITION CONTAINING SAME, SEMICONDUCTOR DEVICE MANUFACTURED USING SAME

The present invention relates to a phosphonium-based compound represented by chemical formula 1, an epoxy resin composition containing the same, and a semiconductor device manufactured by using the same.

Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method

The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: ##STR00001## wherein R.sup.1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R.sup.2 to R.sup.5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R.sup.2 to R.sup.5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m.sup.2 and m.sup.3 are each independently an integer of 0 to 8; m.sup.4 and m.sup.5 are each independently an integer of 0 to 9, provided that m.sup.2, m.sup.3, m.sup.4, and m.sup.5 are not 0 at the same time; n is an integer of 1 to 4; and p.sup.2 to p.sup.5 are each independently an integer of 0 to 2.