Methods of synthesizing compounds comprising fluorinated aryl groups are disclosed, wherein said methods utilize hydrogen bond directed photocatalytic hydrodefluorination.

A resist blend for additive manufacturing includes a radiopaque pre-polymer compound, a photoinitiator, a polymerization inhibitor, and a base pre-polymer. The radiopaque pre-polymer compound includes at least one of the following elements: iodine, bromine, tin, lead, or bismuth. The resist blend is configured to have a first portion of the resist blend to be polymerized and to have a second portion of the resist blend to be unpolymerized, wherein the second portion is removable.

A resist blend for additive manufacturing includes a radiopaque pre-polymer compound, a photoinitiator, a polymerization inhibitor, and a base pre-polymer. The radiopaque pre-polymer compound includes at least one of the following elements: iodine, bromine, tin, lead, or bismuth. The resist blend is configured to have a first portion of the resist blend to be polymerized and to have a second portion of the resist blend to be unpolymerized, wherein the second portion is removable.

A resist blend for additive manufacturing includes a radiopaque pre-polymer compound, a photoinitiator, a polymerization inhibitor, and a base pre-polymer. The radiopaque pre-polymer compound includes at least one of the following elements: iodine, bromine, tin, lead, or bismuth. The resist blend is configured to have a first portion of the resist blend to be polymerized and to have a second portion of the resist blend to be unpolymerized, wherein the second portion is removable.

The present disclosure relates to a process for the manufacturing of an acid halide, wherein the process comprises the steps of: a) providing a flow reactor comprising a reaction chamber; b) providing reactants comprising: i. a carboxylic acid; ii. a reaction co-agent selected from the group consisting of N,N-disubstituted amides; and iii. a phosphoryl halide; c) incorporating the reactants into the reaction chamber of the flow reactor, wherein the molar ratio of the carboxylic acid to the phosphoryl halide is 1 to at least 0.8, and the molar ratio of the carboxylic acid to the co-agent is 1 to at least 0.5; and d) producing a reaction product stream comprising the acid halide. In another aspect, the present disclosure is directed to the use of a phosphoryl halide for the manufacturing of an acid halide in a flow reactor.

The present disclosure relates to a process for the manufacturing of an acid halide, wherein the process comprises the steps of: a) providing a flow reactor comprising a reaction chamber; b) providing reactants comprising: i. a carboxylic acid; ii. a reaction co-agent selected from the group consisting of N,N-disubstituted amides; and iii. a phosphoryl halide; c) incorporating the reactants into the reaction chamber of the flow reactor, wherein the molar ratio of the carboxylic acid to the phosphoryl halide is 1 to at least 0.8, and the molar ratio of the carboxylic acid to the co-agent is 1 to at least 0.5; and d) producing a reaction product stream comprising the acid halide. In another aspect, the present disclosure is directed to the use of a phosphoryl halide for the manufacturing of an acid halide in a flow reactor.

The present disclosure relates to a process for the manufacturing of an acid halide, wherein the process comprises the steps of: a) providing a flow reactor comprising a reaction chamber; b) providing reactants comprising: i. a carboxylic acid; ii. a reaction co-agent selected from the group consisting of N,N-disubstituted amides; and iii. a phosphoryl halide; c) incorporating the reactants into the reaction chamber of the flow reactor, wherein the molar ratio of the carboxylic acid to the phosphoryl halide is 1 to at least 0.8, and the molar ratio of the carboxylic acid to the co-agent is 1 to at least 0.5; and d) producing a reaction product stream comprising the acid halide. In another aspect, the present disclosure is directed to the use of a phosphoryl halide for the manufacturing of an acid halide in a flow reactor.

According to one embodiment, a method includes contacting a triiodobenzoic acid with an oxalyl chloride in a solvent whereby triiodobenzoyl chloride is formed, contacting diethanolamine with triiodobenzoyl chloride where triiodobenzoic diol amine is formed, and forming an acrylate of triiodobenzoic diol amine with acryloyl chloride where an organoiodine compound is formed. According to another embodiment, an optically clear photopolymer resist blend for additive manufacturing includes a radiopaque pre-polymer compound where the compound includes at least one of the following: iodine, bromine, tin, lead, or bismuth. The resist blend also includes a photoinitiator, a polymerization inhibitor, and a base pre-polymer.

According to one embodiment, a method includes contacting a triiodobenzoic acid with an oxalyl chloride in a solvent whereby triiodobenzoyl chloride is formed, contacting diethanolamine with triiodobenzoyl chloride where triiodobenzoic diol amine is formed, and forming an acrylate of triiodobenzoic diol amine with acryloyl chloride where an organoiodine compound is formed. According to another embodiment, an optically clear photopolymer resist blend for additive manufacturing includes a radiopaque pre-polymer compound where the compound includes at least one of the following: iodine, bromine, tin, lead, or bismuth. The resist blend also includes a photoinitiator, a polymerization inhibitor, and a base pre-polymer.

According to one embodiment, a method includes contacting a triiodobenzoic acid with an oxalyl chloride in a solvent whereby triiodobenzoyl chloride is formed, contacting diethanolamine with triiodobenzoyl chloride where triiodobenzoic diol amine is formed, and forming an acrylate of triiodobenzoic diol amine with acryloyl chloride where an organoiodine compound is formed. According to another embodiment, an optically clear photopolymer resist blend for additive manufacturing includes a radiopaque pre-polymer compound where the compound includes at least one of the following: iodine, bromine, tin, lead, or bismuth. The resist blend also includes a photoinitiator, a polymerization inhibitor, and a base pre-polymer.