C07C211/26

POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS
20250289931 · 2025-09-18 · ·

The present invention is a polyvalent ammonium salt compound having two or more ammonium ions per molecule, the polyvalent ammonium salt compound being represented by the following general formula (A-1). This can provide: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a silicon-containing resist underlayer film that has an appropriate etching rate and can improve LWR and CDU in an ultra-fine pattern in a multilayer resist method; a polyvalent ammonium salt compound to be contained in the composition; and a patterning process using the composition.

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Controlled-delivery cromakalim prodrugs

The present invention provides cromakalim phosphate prodrugs, compositions, and their use for the modulation of ATP-sensitive potassium (K.sub.ATP) channels for therapeutic purposes.

IGF2BP2 inhibitors and uses thereof

Described herein, inter alia, are IGF2BP2 inhibitor compounds and methods of using the same.

IGF2BP2 inhibitors and uses thereof

Described herein, inter alia, are IGF2BP2 inhibitor compounds and methods of using the same.