D The present invention relates to ion pair catalysts (I) comprising the cationic bisguanidinium ligand (A) and diperoxomolybdate anion (B). The present invention also relates to ion pair catalysts (III) comprising the cationic bisguanidinium ligand (C) and peroxotungstate anion (D). It further relates to the use of the said catalysts in the manufacture of enantiomerically enriched sulfoxides. ##STR00001##

A novel onium salt having formula (1) and a resist composition comprising the same as a quencher are provided. When the resist composition is processed by photolithography using high-energy radiation, there is formed a resist pattern which is improved in LWR and CDU. In formula (1), R.sup.1, R.sup.2 and R.sup.3 each are a C.sub.1-C.sub.20 monovalent hydrocarbon group which may contain a heteroatom exclusive of fluorine, and Z.sup.+ is a sulfonium, iodonium or ammonium cation.

Disclosed are compounds of formulae: ##STR00001##
and pharmaceutically acceptable salts thereof, wherein the variables, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, R.sub.11, R.sub.12, R.sub.13, R.sub.14, R.sub.15, R.sub.16, R.sub.17, n, and m are defined herein. These compounds are useful for treating Gram-negative bacteria infections. Also disclosed are methods of making these compounds.

Disclosed are compounds of formulae: and pharmaceutically acceptable salts thereof, wherein the variables, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, R.sub.11, R.sub.12, R.sub.13, R.sub.14, R.sub.15, R.sub.16, R.sub.17, n, and m are defined herein. These compounds are useful for treating Gram-negative bacteria infections. Also disclosed are methods of making these compounds.

##STR00001##

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound that generates an acid represented by Formula (I) by irradiation with an actinic ray or radiation, and a resin. The resist film is formed of the actinic ray-sensitive or radiation-sensitive resin composition. In the pattern forming method and the method of manufacturing an electronic device, the actinic ray-sensitive or radiation-sensitive resin composition is used.

##STR00001##

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound that generates an acid represented by Formula (I) by irradiation with an actinic ray or radiation, and a resin. The resist film is formed of the actinic ray-sensitive or radiation-sensitive resin composition. In the pattern forming method and the method of manufacturing an electronic device, the actinic ray-sensitive or radiation-sensitive resin composition is used.

##STR00001##

Disclosed are compounds of formulae:

##STR00001##

and pharmaceutically acceptable salts thereof, wherein the variables, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, R.sub.11, R.sub.12, R.sub.13, R.sub.14, R.sub.15, R.sub.16, R.sub.17, n, and m are defined herein. These compounds are useful for treating Gram-negative bacteria infections. Also disclosed are methods of making these compounds.

The present invention relates to ion pair catalysts (I) comprising the cationic bisguanidinium ligand (A) and diperoxomolybdate anion (B). The present invention also relates to ion pair catalysts (III) comprising the cationic bisguanidinium ligand (C) and peroxotungstate anion (D). It further relates to the use of the said catalysts in the manufacture of enantiomerically enriched sulfoxides.

##STR00001##

Non-ionic photo-acid generating (PAG) compounds were prepared that contain an aryl ketone group having a perfluorinated substituent alpha to the ketone carbonyl. The non-polymeric PAGs release a sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100 C. to 150 C., resulting in formation of good line patterns after development. At higher temperatures, the PAGs can also undergo a thermal reaction to form a sulfonic acid. The perfluorinated substituent provides improved thermal stability and hydrolytic/nucleophilic stability.

Non-ionic photo-acid generating (PAG) compounds were prepared that contain an aryl ketone group having a perfluorinated substituent alpha to the ketone carbonyl. The non-polymeric PAGs release a sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100 C. to 150 C., resulting in formation of good line patterns after development. At higher temperatures, the PAGs can also undergo a thermal reaction to form a sulfonic acid. The perfluorinated substituent provides improved thermal stability and hydrolytic/nucleophilic stability.