Hole injection layer and charge generation layer containing a truxene based compound are disclosed for organic electronic devices. By applying the truxene based compound for the hole injection layer, low driving voltage, high efficiency and long lifetime of the device can be achieved. In addition, a P-type charge generation layer comprising the truxene based compound can be used in tandem OLEDs structure and can further improve the voltage, efficiency and lifetime of the device.

Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

The present disclosure relates to a new type of vortioxetine analogue of Formula I or its polymorph or a solvate, a composition, and a kit comprising the analogue, the polymorph or the solvate, and the use of the compound or the polymorph or the solvate, or the composition in the preparation of a medicament for the treatment of depression. The methods of preparation of the analogues and intermediate compounds are also described.

##STR00001##

The present disclosure relates to a new type of vortioxetine analogue of Formula I or its polymorph or a solvate, a composition, and a kit comprising the analogue, the polymorph or the solvate, and the use of the compound or the polymorph or the solvate, or the composition in the preparation of a medicament for the treatment of depression. The methods of preparation of the analogues and intermediate compounds are also described.

##STR00001##

The present disclosure relates to a new type of vortioxetine analogue of Formula I or its polymorph or a solvate, a composition, and a kit comprising the analogue, the polymorph or the solvate, and the use of the compound or the polymorph or the solvate, or the composition in the preparation of a medicament for the treatment of depression. The methods of preparation of the analogues and intermediate compounds are also described.

##STR00001##

The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.