The present Invention' relates to a method of preparing reduced grapheme oxide, Incorporation of the adduced graphene oxide into polyisoprene latex to provide a polyisoprene latex graphene composite and elastomerk articles prepared using the polyisoprene latex-graphene composite. In particular, the reduction of-graphene oxide is accomplished without the use of strong reducing agents and organic solvents and incorporation of die reduced graphene oxide into polyisoprene latex Is accomplished using room temperature latex mixing method or hot maturation. The resultant composite exhibits good colloid stability and polyisoprene latex films produced from the composite exhibit good mechanical properties with improved ageing resistance.

Disclosed are methods of measuring enzyme activity in a sample. The methods use disulfide-containing detection reagents with an electrochemiluminescent functional group.

Process for preparing isononylamines starting out from 2-ethylhexanol, characterized in that (a) 2-ethylhexanol is dehydrated in the presence of a catalyst to form octene; (b) the octene obtained in step a) is reacted with carbon monoxide and hydrogen in the presence of a transition metal compound of group VIII of the Periodic Table of the Elements to form isononanal; and (c) the isononanal obtained in step b) is converted into isononylamines.

Process for preparing isononylamines starting out from 2-ethylhexanol, characterized in that (a) 2-ethylhexanol is dehydrated in the presence of a catalyst to form octene; (b) the octene obtained in step a) is reacted with carbon monoxide and hydrogen in the presence of a transition metal compound of group VIII of the Periodic Table of the Elements to form isononanal; and (c) the isononanal obtained in step b) is converted into isononylamines.

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge.sub.2Sb.sub.2Te.sub.5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge.sub.2Sb.sub.2Te.sub.5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).