C07C2603/90

Poly-cyanostilbene macrocycles

The present disclosure concerns synthesis and anion binding features of poly-cyanostilbene macrocycles of Formula (I): ##STR00001##

O-HYDROXY-FUNCTIONALIZED DIAMINES, POLYIMIDES, METHODS OF MAKING EACH, AND METHODS OF USE
20170190842 · 2017-07-06 ·

Embodiments of the present disclosure provide for an ortho (o)-hydroxy-functionalized diamine, a method of making an o-hydroxy-functionalized diamine, an o-hydroxy-functionalized diamine-based polyimide, a method of making an o-hydroxy-functionalized diamine imide, methods of gas separation, and the like.

MODULATORS OF THE INTEGRATED STRESS PATHWAY

Provided herein are compounds, compositions, and methods useful for modulating the integrated stress response (ISR) and for treating related diseases; disorders and conditions.

Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith

According to one embodiment, An actinic-ray- or radiation-sensitive resin composition comprises a basic compound (C) having n basic groups and m groups that when exposed to actinic rays or radiation, generate an acid, provided that n and m satisfy the relationships n1, m2 and n<m.

Pattern forming method and plasma processing method

A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, and position 13 of the triptycene skeleton are arranged, and a second plane in which position 4, position 5, and position 16 of the triptycene skeleton are arranged. The triptycene derivative includes a first side chain on a one plane side, the one plane side being on a side of one plane from among the first plane and the second plane, and a second side chain on another plane side or on the one plane side, the another plane side being on a side of another plane from among the first plane and the second plane. The second side chain is different from the first side chain in an etching selectivity ratio.