A method of treating a disease that is treatable through inhibition of at least one kinase selected from the group consisting of CDK7, CDK4, CDK6, PIM2, TSSK3, MST4, NEK6, MAP3K, MST3, DDR1, SPHK1, CaMK1, AurA, BRK, CaMK4, and PIM1, the method comprising administering an effective dose of a compound represented by the following formula (1) or a salt thereof to a patient: ##STR00001##

A method of treating a disease that is treatable through inhibition of at least one kinase selected from the group consisting of CDK7, CDK4, CDK6, PIM2, TSSK3, MST4, NEK6, MAP3K, MST3, DDR1, SPHK1, CaMK1, AurA, BRK, CaMK4, and PIM1, the method comprising administering an effective dose of a compound represented by the following formula (1) or a salt thereof to a patient: ##STR00001##

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W.sub.1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W.sub.2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M.sup.+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source. ##STR00001##

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition comprising the same:

##STR00001##

wherein R.sup.1 and R.sup.2 each represent a hydroxy group, *—O—R.sup.10, *—O-L.sup.10-CO—O—R.sup.10; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4, R.sup.5, R.sup.7 and R.sup.8 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A.sup.1 and A.sup.2 each represent a hydrocarbon group, the hydrocarbon group may have a substituent, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO.sub.2—; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4, 1≤m1+m7≤5, 0≤m2+m8≤5; and AI.sup.− represents an organic anion.

Disclosed are a salt represented by formula (I), an acid generator, and a resist composition comprising the same:

##STR00001##

wherein R.sup.1 and R.sup.2 each represent a hydroxy group, *—O—R.sup.10, *—O-L.sup.10-CO—O—R.sup.10; L.sup.10 represents an alkanediyl group; R.sup.10 represents an acid-labile group; R.sup.4, R.sup.5, R.sup.7 and R.sup.8 each represent a halogen atom, a haloalkyl group or a hydrocarbon group; A.sup.1 and A.sup.2 each represent a hydrocarbon group, the hydrocarbon group may have a substituent, and —CH.sub.2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO.sub.2—; m1 represents an integer of 1 to 5, m2 and m8 represent an integer of 0 to 5, m4, m5 and m7 represent an integer of 0 to 4, 1≤m1+m7≤5, 0≤m2+m8≤5; and AI.sup.− represents an organic anion.

The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. The organic electroluminescent device having a low driving voltage and/or a high luminous efficiency and/or a long lifespan can be provided, by comprising an organic electroluminescent compound according to the present disclosure.

The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. The organic electroluminescent device having a low driving voltage and/or a high luminous efficiency and/or a long lifespan can be provided, by comprising an organic electroluminescent compound according to the present disclosure.

The present application provides a compound of Formula (A), or a pharmaceutically acceptable salt thereof, wherein R.sup.1, L.sup.1, n, L.sup.2, m, L.sup.3, p, Y.sup.2, and Y.sup.3 are as described herein. Methods of using the compound of Formula (A) to prepare an antibody conjugate, and methods of using these conjugates for cellular imaging are also described.

##STR00001##

An object of the present invention is to provide a material for a highly efficient and highly durable organic EL device, and specifically, an organic compound with excellent properties including excellent hole-injecting/transporting performance, electron-blocking capability, and high stability in the form of a thin film. Another object of the present invention is to provide a highly efficient and highly durable organic EL device by using this compound. The present invention is directed to an arylamine compound having a fluorenyl skeleton-containing heterocycle structure, with excellent heat resistance and good hole-transporting capability. An organic EL device including this compound in its hole-transporting layer, electron-blocking layer, light-emitting layer, or hole-injecting layer exhibited good device characteristics.