The present invention relates to a novel cancer metastasis preventing and curing selenopheno[h]chromene derivatives, as well as methods of their manufacturing and use in different pharmaceutical compositions for the treatment and/or prevention of primary cancer and its metastasis by administration of such substances.

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An asymmetric benzotrichalcogenophene compound and a polymer are provided. The asymmetric benzotrichalcogenophene compound is a heterocyclic compound having furan, thiophene, selenophene and/or tellurophene subunits. The polymer has an asymmetric benzotrichalcogenophene subunit and can be formed by polymerizing the asymmetric benzotrichalcogenophene compound and an electron-accepting compound. The polymer may be used as a semiconductor active layer material in an organic field effect transistor or a heterogeneous interface material of an organic solar cell.

An asymmetric benzotrichalcogenophene compound and a polymer are provided. The asymmetric benzotrichalcogenophene compound is a heterocyclic compound having furan, thiophene, selenophene and/or tellurophene subunits. The polymer has an asymmetric benzotrichalcogenophene subunit and can be formed by polymerizing the asymmetric benzotrichalcogenophene compound and an electron-accepting compound. The polymer may be used as a semiconductor active layer material in an organic field effect transistor or a heterogeneous interface material of an organic solar cell.

A condensed cyclic compound includes at least one first repeating unit represented by Formula 1-1 and/or Formula 1-2 and at least one second repeating unit represented by Formula 2-1 and/or Formula 2-2. A light-receiving device includes the condensed cyclic compound in a light-receiving layer of the light-receiving device, and an electronic apparatus and an electronic device include the light-receiving device.

##STR00001##

A condensed cyclic compound includes at least one first repeating unit represented by Formula 1-1 and/or Formula 1-2 and at least one second repeating unit represented by Formula 2-1 and/or Formula 2-2. A light-receiving device includes the condensed cyclic compound in a light-receiving layer of the light-receiving device, and an electronic apparatus and an electronic device include the light-receiving device.

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Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.

Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm.

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X, Y, and Z each independently represent a specific ring-constituting atom. R.sup.1 and R.sup.2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R.sup.3 and R.sup.4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.

Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm.

##STR00001##

X, Y, and Z each independently represent a specific ring-constituting atom. R.sup.1 and R.sup.2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R.sup.3 and R.sup.4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. ##STR00001## (X represents an oxygen, sulfur, selenium, or tellurium atom or NR.sup.5; Y and Z each represents CR.sup.6, an oxygen, sulfur, selenium, or nitrogen atom, or NR.sup.7; a ring containing Y and Z is an aromatic heterocycle; any one of R.sup.1 and R.sup.2 and the aromatic heterocycle containing Y and Z or any one of R.sup.3 and R.sup.4 and a benzene ring may be bonded to each other through a specific divalent linking group; R.sup.1, R.sup.2, and R.sup.5 to R.sup.8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R.sup.3 and R.sup.4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. ##STR00001## (X represents an oxygen, sulfur, selenium, or tellurium atom or NR.sup.5; Y and Z each represents CR.sup.6, an oxygen, sulfur, selenium, or nitrogen atom, or NR.sup.7; a ring containing Y and Z is an aromatic heterocycle; any one of R.sup.1 and R.sup.2 and the aromatic heterocycle containing Y and Z or any one of R.sup.3 and R.sup.4 and a benzene ring may be bonded to each other through a specific divalent linking group; R.sup.1, R.sup.2, and R.sup.5 to R.sup.8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R.sup.3 and R.sup.4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

An asymmetric benzotrichalcogenophene compound and a polymer are provided. The asymmetric benzotrichalcogenophene compound is a heterocyclic compound having furan, thiophene, selenophene and/or tellurophene subunits. The polymer has an asymmetric benzotrichalcogenophene subunit and can be formed by polymerizing the asymmetric benzotrichalcogenophene compound and an electron-accepting compound. The polymer may be used as a semiconductor active layer material in an organic field effect transistor or a heterogeneous interface material of an organic solar cell.